Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen

D J Spence; T C Q Noakes; P Bailey; S P Tear

Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen

D J Spence, T C Q Noakes, P Bailey, S P Tear

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A two-dimensional dysprosium germanide of stoichiometry DyGe2 on the Ge(111) surface, with a nominal Dy coverage of one monolayer, has been investigated using medium-energy ion scattering. A quantitative structural analysis has revealed that the Dy atoms reside beneath a well-ordered Ge(111) bilayer, rotated by 180 degrees with respect to the bulk. Upon adsorption of hydrogen, the buckling of the top layer was seen to reverse with a corresponding expansion of the Dy-Ge bond length. Possible generalizations for other rare earth/semiconductor systems are discussed.

Original language	English
Pages (from-to)	5016-5020
Number of pages	5
Journal	Physical Review B
Volume	62
Issue number	8
Publication status	Published - 15 Aug 2000

Keywords

2-DIMENSIONAL ER SILICIDE
SI(111)
OVERLAYERS
SURFACES
PHASES
ERSI2

Cite this

@article{54e27a3d785d4ed9b4ab3358c7e96a8e,

title = "Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen",

abstract = "A two-dimensional dysprosium germanide of stoichiometry DyGe2 on the Ge(111) surface, with a nominal Dy coverage of one monolayer, has been investigated using medium-energy ion scattering. A quantitative structural analysis has revealed that the Dy atoms reside beneath a well-ordered Ge(111) bilayer, rotated by 180 degrees with respect to the bulk. Upon adsorption of hydrogen, the buckling of the top layer was seen to reverse with a corresponding expansion of the Dy-Ge bond length. Possible generalizations for other rare earth/semiconductor systems are discussed.",

keywords = "2-DIMENSIONAL ER SILICIDE, SI(111), OVERLAYERS, SURFACES, PHASES, ERSI2",

author = "Spence, {D J} and Noakes, {T C Q} and P Bailey and Tear, {S P}",

year = "2000",

month = aug,

day = "15",

language = "English",

volume = "62",

pages = "5016--5020",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "8",

}

Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen. / Spence, D J; Noakes, T C Q; Bailey, P et al.
In: Physical Review B, Vol. 62, No. 8, 15.08.2000, p. 5016-5020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen

AU - Spence, D J

AU - Noakes, T C Q

AU - Bailey, P

AU - Tear, S P

PY - 2000/8/15

Y1 - 2000/8/15

N2 - A two-dimensional dysprosium germanide of stoichiometry DyGe2 on the Ge(111) surface, with a nominal Dy coverage of one monolayer, has been investigated using medium-energy ion scattering. A quantitative structural analysis has revealed that the Dy atoms reside beneath a well-ordered Ge(111) bilayer, rotated by 180 degrees with respect to the bulk. Upon adsorption of hydrogen, the buckling of the top layer was seen to reverse with a corresponding expansion of the Dy-Ge bond length. Possible generalizations for other rare earth/semiconductor systems are discussed.

AB - A two-dimensional dysprosium germanide of stoichiometry DyGe2 on the Ge(111) surface, with a nominal Dy coverage of one monolayer, has been investigated using medium-energy ion scattering. A quantitative structural analysis has revealed that the Dy atoms reside beneath a well-ordered Ge(111) bilayer, rotated by 180 degrees with respect to the bulk. Upon adsorption of hydrogen, the buckling of the top layer was seen to reverse with a corresponding expansion of the Dy-Ge bond length. Possible generalizations for other rare earth/semiconductor systems are discussed.

KW - 2-DIMENSIONAL ER SILICIDE

KW - SI(111)

KW - OVERLAYERS

KW - SURFACES

KW - PHASES

KW - ERSI2

M3 - Article

SN - 0163-1829

VL - 62

SP - 5016

EP - 5020

JO - Physical Review B

JF - Physical Review B

IS - 8

ER -