@inbook{0223e4e2f4b945f7be49014ec71dfc48,
title = "Investigation of InxGa1-xN islands with electron microscopy",
abstract = "InxGa1-xN islands grown by molecular beam epitaxy are analysed by transmission electron microscopy. Samples are compared which were of different nominal In concentrations and with or without GaN capping. The optimum imaging conditions for evaluation are described with special focus on polarity determination during analysis.",
author = "A. Pretorius and T. Yamaguchi and M. Schowalter and R. Kroeger and C. Kuebel and D. Hommel and A. Rosenauer",
note = "Times Cited: 0 14th Conference on Microscopy of Semiconducting Materials APR 11-14, 2005 Univ Oxford, Oxford, ENGLAND Royal Microscop Soc; Inst Phys, Elect Microscopy & Anal Grp; Mat Res Soc",
year = "2005",
language = "Undefined/Unknown",
volume = "107",
series = "Springer Proceedings in Physics",
pages = "17--20",
editor = "Cullis, {A. G. Hutchison J. L.}",
booktitle = "Microscopy of Semiconducting Materials",
}