Abstract
The deposition of over 3 ML of silicon onto ordered surfaces of Si(111)1 X 1-Pb and Si(111)(square-root 3 X square-root 3)R30-degrees-Pb (beta phase) has been studied by observation of the LEED patterns and I(V) curves.
Results show that for annealing temperatures as low as 50-degrees-C the LEED I(V) curves after Si deposition are very similar to those observed before deposition. Therefore it is concluded that the structure of the surfaces before and after silicon deposition are likely to be the same, and that Pb may have considerably reduced the temperature required for epitaxial growth of Si on Si(111). It is also found that further annealing to 300-degrees-C of the Si/Si(111)1 X 1-Pb system produces the beta phase. This temperature is in agreement with the Si(111)1 X 1-Pb to beta phase transition.
| Original language | English |
|---|---|
| Pages (from-to) | 645-649 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 309 |
| Publication status | Published - 20 Apr 1994 |
Keywords
- SI(111)
- GROWTH
- PB
- SI