Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors

V. Romanovsky, M. El-Gomati, T. Wells, J. Day

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials
EditorsAG Cullis, JL Hutchison
Place of PublicationBERLIN
Number of pages4
ISBN (Print)3-540-31914-X
Publication statusPublished - 2005
Event14th Conference on Microscopy of Semiconducting Materials - Oxford
Duration: 11 Apr 200514 Apr 2005


Conference14th Conference on Microscopy of Semiconducting Materials

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