Abstract
A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.
Original language | English |
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Title of host publication | Microscopy of Semiconducting Materials |
Editors | AG Cullis, JL Hutchison |
Place of Publication | BERLIN |
Publisher | Springer |
Pages | 499-502 |
Number of pages | 4 |
ISBN (Print) | 3-540-31914-X |
Publication status | Published - 2005 |
Event | 14th Conference on Microscopy of Semiconducting Materials - Oxford Duration: 11 Apr 2005 → 14 Apr 2005 |
Conference
Conference | 14th Conference on Microscopy of Semiconducting Materials |
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City | Oxford |
Period | 11/04/05 → 14/04/05 |