Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors

V. Romanovsky, M. El-Gomati, T. Wells, J. Day

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials
EditorsAG Cullis, JL Hutchison
Place of PublicationBERLIN
PublisherSpringer
Pages499-502
Number of pages4
ISBN (Print)3-540-31914-X
Publication statusPublished - 2005
Event14th Conference on Microscopy of Semiconducting Materials - Oxford
Duration: 11 Apr 200514 Apr 2005

Conference

Conference14th Conference on Microscopy of Semiconducting Materials
CityOxford
Period11/04/0514/04/05

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