Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors

V. Romanovsky; M. El-Gomati; T. Wells; J. Day

Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors

V. Romanovsky, M. El-Gomati, T. Wells, J. Day

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials
Editors	AG Cullis, JL Hutchison
Place of Publication	BERLIN
Publisher	Springer
Pages	499-502
Number of pages	4
ISBN (Print)	3-540-31914-X
Publication status	Published - 2005
Event	14th Conference on Microscopy of Semiconducting Materials - Oxford Duration: 11 Apr 2005 → 14 Apr 2005

Conference

Conference	14th Conference on Microscopy of Semiconducting Materials
City	Oxford
Period	11/04/05 → 14/04/05

Cite this

@inproceedings{964d008dbfbf4b41ae4d14c00223cd6f,

title = "Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors",

abstract = "A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.",

author = "V. Romanovsky and M. El-Gomati and T. Wells and J. Day",

year = "2005",

language = "English",

isbn = "3-540-31914-X",

pages = "499--502",

editor = "AG Cullis and JL Hutchison",

booktitle = "Microscopy of Semiconducting Materials",

publisher = "Springer",

address = "Germany",

note = "14th Conference on Microscopy of Semiconducting Materials ; Conference date: 11-04-2005 Through 14-04-2005",

}

TY - GEN

T1 - Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors

AU - Romanovsky, V.

AU - El-Gomati, M.

AU - Wells, T.

AU - Day, J.

PY - 2005

Y1 - 2005

N2 - A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.

AB - A new low energy scanning analytical microscope (LeSAM), combining scanning electron microscopy (SEM), scanning low energy electron microscopy (SLEEM), Auger electron spectroscopy (AES) and scanning Auger mapping (SAM), was realized using a new mini-electron column in conjunction with a cylindrical mirror analyser (CMA). The SLEEM mode of operation uses a cathode lens in which the specimen is negatively biased. In this arrangement, electrons pass through the microscope at high energy and are decelerated to a low incidental energy at the specimen. A novel 6 segment angular resolved in-lens detector is employed for signal detection. The new mini-electron column in SLEEM mode gives high resolution for primary incident beam energies of a few eV. For AES and SAM modes of operation a 6 segment angular resolved detector is also employed for signal detection.

M3 - Conference contribution

SN - 3-540-31914-X

SP - 499

EP - 502

BT - Microscopy of Semiconducting Materials

A2 - Cullis, AG

A2 - Hutchison, JL

PB - Springer

CY - BERLIN

T2 - 14th Conference on Microscopy of Semiconducting Materials

Y2 - 11 April 2005 through 14 April 2005

ER -