Low saturation fluence in a semiconductor saturable electroabsorber mirror operated in a self-biased regime

TY - JOUR

T1 - Low saturation fluence in a semiconductor saturable electroabsorber mirror operated in a self-biased regime

AU - Ryvkin, B. S.

AU - Panajotov, K.

AU - Avrutin, E. A.

N1 - © 2008 American Institute of Physics. This is an author produced version of a paper published in Journal Of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.

PY - 2008/5/15

Y1 - 2008/5/15

N2 - A semiconductor saturable absorber mirror utilizing the electroabsorption effect on a self-biased stack of extremely shallow quantum wells is proposed and analyzed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favorably with existing all-optical constructions. (C) 2008 American Institute of Physics.

AB - A semiconductor saturable absorber mirror utilizing the electroabsorption effect on a self-biased stack of extremely shallow quantum wells is proposed and analyzed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favorably with existing all-optical constructions. (C) 2008 American Institute of Physics.

KW - SHALLOW QUANTUM-WELLS

KW - LASERS

KW - BISTABILITY

KW - ABSORPTION

KW - ABSORBER

KW - DEVICES

UR - http://www.scopus.com/inward/record.url?scp=44649134561&partnerID=8YFLogxK

U2 - 10.1063/1.2921830

DO - 10.1063/1.2921830

M3 - Article

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103102

ER -