Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy

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We demonstrate that perpendicular anisotropy can be induced in Co2FeAl0.5Si0.5 by depositing the Heusler alloy on a tungsten seed layer. This is increased by elevating the deposition temperature to a moderate value up to 335 K. These perpendicular layers can be implemented into GMR devices, showing layer-thickness dependent switching without the use of an antiferromagnetic pinning-layer. These layers can be implemented into the manufacturing process of read-heads, where temperatures are limited.
Original languageEnglish
Pages (from-to)100-104
JournalJournal of Magnetism and Magnetic Materials
Early online date3 Apr 2019
Publication statusE-pub ahead of print - 3 Apr 2019

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© 2019 Elsevier B.V. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy

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