Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy

William James Frost; Marjan Samiepour; Atsufumi Hirohata

doi:10.1016/j.jmmm.2019.04.008

Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy

William James Frost, Marjan Samiepour, Atsufumi Hirohata

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate that perpendicular anisotropy can be induced in Co2FeAl0.5Si0.5 by depositing the Heusler alloy on a tungsten seed layer. This is increased by elevating the deposition temperature to a moderate value up to 335 K. These perpendicular layers can be implemented into GMR devices, showing layer-thickness dependent switching without the use of an antiferromagnetic pinning-layer. These layers can be implemented into the manufacturing process of read-heads, where temperatures are limited.

Original language	English
Pages (from-to)	100-104
Journal	Journal of Magnetism and Magnetic Materials
Volume	484
Early online date	3 Apr 2019
DOIs	https://doi.org/10.1016/j.jmmm.2019.04.008
Publication status	E-pub ahead of print - 3 Apr 2019

Bibliographical note

Access to Document

10.1016/j.jmmm.2019.04.008

Annealing Paper_Review_2
© 2019 Elsevier B.V. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.
Accepted author manuscript, 677 KBLicence: CC BY-NC-ND

Cite this

@article{a113362220e44db488168313c4e67e72,

title = "Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy",

abstract = "We demonstrate that perpendicular anisotropy can be induced in Co2FeAl0.5Si0.5 by depositing the Heusler alloy on a tungsten seed layer. This is increased by elevating the deposition temperature to a moderate value up to 335 K. These perpendicular layers can be implemented into GMR devices, showing layer-thickness dependent switching without the use of an antiferromagnetic pinning-layer. These layers can be implemented into the manufacturing process of read-heads, where temperatures are limited.",

author = "Frost, {William James} and Marjan Samiepour and Atsufumi Hirohata",

note = "{\textcopyright} 2019 Elsevier B.V. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy",

year = "2019",

month = apr,

day = "3",

doi = "10.1016/j.jmmm.2019.04.008",

language = "English",

volume = "484",

pages = "100--104",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

}

TY - JOUR

T1 - Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy

AU - Frost, William James

AU - Samiepour, Marjan

AU - Hirohata, Atsufumi

PY - 2019/4/3

Y1 - 2019/4/3

N2 - We demonstrate that perpendicular anisotropy can be induced in Co2FeAl0.5Si0.5 by depositing the Heusler alloy on a tungsten seed layer. This is increased by elevating the deposition temperature to a moderate value up to 335 K. These perpendicular layers can be implemented into GMR devices, showing layer-thickness dependent switching without the use of an antiferromagnetic pinning-layer. These layers can be implemented into the manufacturing process of read-heads, where temperatures are limited.

AB - We demonstrate that perpendicular anisotropy can be induced in Co2FeAl0.5Si0.5 by depositing the Heusler alloy on a tungsten seed layer. This is increased by elevating the deposition temperature to a moderate value up to 335 K. These perpendicular layers can be implemented into GMR devices, showing layer-thickness dependent switching without the use of an antiferromagnetic pinning-layer. These layers can be implemented into the manufacturing process of read-heads, where temperatures are limited.

U2 - 10.1016/j.jmmm.2019.04.008

DO - 10.1016/j.jmmm.2019.04.008

M3 - Article

SN - 0304-8853

VL - 484

SP - 100

EP - 104

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -