Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

Haokaifeng Wu; Gonzalo Vallejo Fernandez; Atsufumi Hirohata

doi:10.1088/1361-6463/aa80d5

Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

Haokaifeng Wu, Gonzalo Vallejo Fernandez, Atsufumi Hirohata

Research output: Contribution to journal › Article › peer-review

Abstract

80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.

Original language	English
Article number	375001
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	37
Early online date	19 Jul 2017
DOIs	https://doi.org/10.1088/1361-6463/aa80d5
Publication status	Published - 23 Aug 2017

Bibliographical note

Keywords

Heusler alloy
exchange bias
hysteresis loop

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10.1088/1361-6463/aa80d5Licence: CC BY

Article
© 2017 IOP Publishing Ltd
Accepted author manuscript, 1.22 MBLicence: CC BY

Cite this

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title = "Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures",

abstract = "80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.",

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T1 - Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

AU - Wu, Haokaifeng

AU - Vallejo Fernandez, Gonzalo

AU - Hirohata, Atsufumi

PY - 2017/8/23

Y1 - 2017/8/23

N2 - 80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.

AB - 80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.

KW - Heusler alloy

KW - exchange bias

KW - hysteresis loop

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Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

Abstract

Bibliographical note

Keywords

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