By the same authors

From the same journal

From the same journal

Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

Research output: Contribution to journalArticlepeer-review

Full text download(s)

Published copy (DOI)



Publication details

JournalJournal of Physics D: Applied Physics
DateSubmitted - 2017
DateAccepted/In press - 14 Jul 2017
DateE-pub ahead of print (current) - 19 Jul 2017
Early online date19/07/17
Original languageEnglish


80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.

Bibliographical note

© 2017 IOP Publishing Ltd

Discover related content

Find related publications, people, projects, datasets and more using interactive charts.

View graph of relations