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Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

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Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures. / Wu, Haokaifeng; Vallejo Fernandez, Gonzalo; Hirohata, Atsufumi.

In: Journal of Physics D: Applied Physics, 19.07.2017.

Research output: Contribution to journalArticle

Harvard

Wu, H, Vallejo Fernandez, G & Hirohata, A 2017, 'Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures', Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/aa80d5

APA

Wu, H., Vallejo Fernandez, G., & Hirohata, A. (2017). Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures. Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/aa80d5

Vancouver

Wu H, Vallejo Fernandez G, Hirohata A. Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures. Journal of Physics D: Applied Physics. 2017 Jul 19. https://doi.org/10.1088/1361-6463/aa80d5

Author

Wu, Haokaifeng ; Vallejo Fernandez, Gonzalo ; Hirohata, Atsufumi. / Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures. In: Journal of Physics D: Applied Physics. 2017.

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@article{83f55f4fb2da499db4eba1ff73861cd4,
title = "Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures",
abstract = "80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.",
author = "Haokaifeng Wu and {Vallejo Fernandez}, Gonzalo and Atsufumi Hirohata",
note = "{\circledC} 2017 IOP Publishing Ltd",
year = "2017",
month = "7",
day = "19",
doi = "10.1088/1361-6463/aa80d5",
language = "English",
journal = "Journal of Physics D: Applied Physics",
issn = "1361-6463",
publisher = "IOP Publishing Ltd.",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures

AU - Wu, Haokaifeng

AU - Vallejo Fernandez, Gonzalo

AU - Hirohata, Atsufumi

N1 - © 2017 IOP Publishing Ltd

PY - 2017/7/19

Y1 - 2017/7/19

N2 - 80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.

AB - 80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.

U2 - 10.1088/1361-6463/aa80d5

DO - 10.1088/1361-6463/aa80d5

M3 - Article

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 1361-6463

ER -