Magnetic and Structural Properties of Fully Epitaxial Fe3O4/MgO/GaAs(100) for Spin Injection

Ping Kwan Johnny Wong; Wen Zhang; Yongbing Xu; Sameh Hassan; Sarah M. Thompson

doi:10.1109/TMAG.2008.2001588

Magnetic and Structural Properties of Fully Epitaxial Fe3O4/MgO/GaAs(100) for Spin Injection

Ping Kwan Johnny Wong, Wen Zhang, Yongbing Xu, Sameh Hassan, Sarah M. Thompson

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the authors report on the investigation on the effect of inserting an epitaxial MgO layer on the structural and magnetic properties of Fe3O4 ultrathin films grown on GaAs(100) by combined techniques of molecular beam epitaxy and postgrowth annealing in an oxygen atmosphere. The MgO films were grown with a cube-on-cube orientation to GaAs. The epitaxial Fe3O4 lattice cell was rotated by 45 degrees in respect to that of MgO and GaAs due to the lattice relaxation of the magnetic layer. All samples studied exhibited strong fourfold cubic magnetic anisotropy with easy axes along the < 001 > directions of GaAs. A dramatic decrease in the uniaxial anisotropy constant in the presence of the MgO barrier was observed. The existence of the uniaxial magnetic anisotropy in the Fe3O4/GaAs hybrid structure has been attributed to the interfacial contact between the magnetite film and the GaAs.

Original language	English
Pages (from-to)	2640-2642
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2008.2001588
Publication status	Published - Nov 2008

Keywords

Half metal
magnetic anisotropy
magnetite
molecular beam epitaxy
spintronics
THIN-FILMS
GROWTH
MGO

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10.1109/TMAG.2008.2001588

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4717807

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title = "Magnetic and Structural Properties of Fully Epitaxial Fe3O4/MgO/GaAs(100) for Spin Injection",

abstract = "In this paper, the authors report on the investigation on the effect of inserting an epitaxial MgO layer on the structural and magnetic properties of Fe3O4 ultrathin films grown on GaAs(100) by combined techniques of molecular beam epitaxy and postgrowth annealing in an oxygen atmosphere. The MgO films were grown with a cube-on-cube orientation to GaAs. The epitaxial Fe3O4 lattice cell was rotated by 45 degrees in respect to that of MgO and GaAs due to the lattice relaxation of the magnetic layer. All samples studied exhibited strong fourfold cubic magnetic anisotropy with easy axes along the < 001 > directions of GaAs. A dramatic decrease in the uniaxial anisotropy constant in the presence of the MgO barrier was observed. The existence of the uniaxial magnetic anisotropy in the Fe3O4/GaAs hybrid structure has been attributed to the interfacial contact between the magnetite film and the GaAs.",

keywords = "Half metal, magnetic anisotropy, magnetite, molecular beam epitaxy, spintronics, THIN-FILMS, GROWTH, MGO",

author = "Wong, {Ping Kwan Johnny} and Wen Zhang and Yongbing Xu and Sameh Hassan and Thompson, {Sarah M.}",

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T1 - Magnetic and Structural Properties of Fully Epitaxial Fe3O4/MgO/GaAs(100) for Spin Injection

AU - Wong, Ping Kwan Johnny

AU - Zhang, Wen

AU - Xu, Yongbing

AU - Hassan, Sameh

AU - Thompson, Sarah M.

PY - 2008/11

Y1 - 2008/11

N2 - In this paper, the authors report on the investigation on the effect of inserting an epitaxial MgO layer on the structural and magnetic properties of Fe3O4 ultrathin films grown on GaAs(100) by combined techniques of molecular beam epitaxy and postgrowth annealing in an oxygen atmosphere. The MgO films were grown with a cube-on-cube orientation to GaAs. The epitaxial Fe3O4 lattice cell was rotated by 45 degrees in respect to that of MgO and GaAs due to the lattice relaxation of the magnetic layer. All samples studied exhibited strong fourfold cubic magnetic anisotropy with easy axes along the < 001 > directions of GaAs. A dramatic decrease in the uniaxial anisotropy constant in the presence of the MgO barrier was observed. The existence of the uniaxial magnetic anisotropy in the Fe3O4/GaAs hybrid structure has been attributed to the interfacial contact between the magnetite film and the GaAs.

AB - In this paper, the authors report on the investigation on the effect of inserting an epitaxial MgO layer on the structural and magnetic properties of Fe3O4 ultrathin films grown on GaAs(100) by combined techniques of molecular beam epitaxy and postgrowth annealing in an oxygen atmosphere. The MgO films were grown with a cube-on-cube orientation to GaAs. The epitaxial Fe3O4 lattice cell was rotated by 45 degrees in respect to that of MgO and GaAs due to the lattice relaxation of the magnetic layer. All samples studied exhibited strong fourfold cubic magnetic anisotropy with easy axes along the < 001 > directions of GaAs. A dramatic decrease in the uniaxial anisotropy constant in the presence of the MgO barrier was observed. The existence of the uniaxial magnetic anisotropy in the Fe3O4/GaAs hybrid structure has been attributed to the interfacial contact between the magnetite film and the GaAs.

KW - Half metal

KW - magnetic anisotropy

KW - magnetite

KW - molecular beam epitaxy

KW - spintronics

KW - THIN-FILMS

KW - GROWTH

KW - MGO

UR - http://www.scopus.com/inward/record.url?scp=70350598732&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2008.2001588

DO - 10.1109/TMAG.2008.2001588

M3 - Article

SN - 0018-9464

VL - 44

SP - 2640

EP - 2642

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11

ER -

Magnetic and Structural Properties of Fully Epitaxial Fe3O4/MgO/GaAs(100) for Spin Injection

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Keywords

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