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Magnetic and Structural Properties of Fully Epitaxial Fe3O4/MgO/GaAs(100) for Spin Injection

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JournalIEEE Transactions on Magnetics
DatePublished - Nov 2008
Issue number11
Volume44
Number of pages3
Pages (from-to)2640-2642
Original languageEnglish

Abstract

In this paper, the authors report on the investigation on the effect of inserting an epitaxial MgO layer on the structural and magnetic properties of Fe3O4 ultrathin films grown on GaAs(100) by combined techniques of molecular beam epitaxy and postgrowth annealing in an oxygen atmosphere. The MgO films were grown with a cube-on-cube orientation to GaAs. The epitaxial Fe3O4 lattice cell was rotated by 45 degrees in respect to that of MgO and GaAs due to the lattice relaxation of the magnetic layer. All samples studied exhibited strong fourfold cubic magnetic anisotropy with easy axes along the < 001 > directions of GaAs. A dramatic decrease in the uniaxial anisotropy constant in the presence of the MgO barrier was observed. The existence of the uniaxial magnetic anisotropy in the Fe3O4/GaAs hybrid structure has been attributed to the interfacial contact between the magnetite film and the GaAs.

    Research areas

  • Half metal, magnetic anisotropy, magnetite, molecular beam epitaxy, spintronics, THIN-FILMS, GROWTH, MGO

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