Magnetic domain wall engineering in a nanoscale permalloy junction

Junlin Wang, Xichao Zhang, Xianyang Lu, Jason Zhang, Yu Yan, Hua Ling, Jing Wu, Yan Zhou, Yongbing Xu

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Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.
Original languageEnglish
Article number072401
Pages (from-to)072401-1 072401-5
Number of pages5
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 14 Aug 2017

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© 2017 The Author(s)

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