Magnetic property of ultrathin single crystal FeO film on InAs(100)

Z.C. Huang; Y. Zhai; Y.B. Xu; J. Wu; S.M. Thompson

doi:10.1109/IVESC.2010.5644154

Magnetic property of ultrathin single crystal FeO film on InAs(100)

Z.C. Huang, Y. Zhai, Y.B. Xu, J. Wu, S.M. Thompson

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Abstract

Half-metallic magnetite FeO has attracted great attention recently for spintronics as it has high polarization at the Fermi level and relatively high electronic conductivity at room temperature, which is believed to be one of the most promising materials for spintronic applications. [1,2] By using O-assisted Molecular Beam Epitaxy (MBE) system, epitaxial growth of FeO films on different substrate has made it possible to study the properties of the single crystalline magnetite film. We have recently succeeded to grow FeO thin film on GaAs and studied its magnetic property. [3, 4] InAs, one of the narrow gap semiconductors, has a higher low-field mobility than that of the GaAs, which makes it an excellent candidate for high speed field effect transistors. In this paper, we report the epitaxial growth and the magnetic property of different thickness of ultrathin FeO film on InAs(100).

Original language	English
Title of host publication	Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
Pages	609-610
Number of pages	2
DOIs	https://doi.org/10.1109/IVESC.2010.5644154
Publication status	Published - 1 Jan 2010

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abstract = "Half-metallic magnetite FeO has attracted great attention recently for spintronics as it has high polarization at the Fermi level and relatively high electronic conductivity at room temperature, which is believed to be one of the most promising materials for spintronic applications. [1,2] By using O-assisted Molecular Beam Epitaxy (MBE) system, epitaxial growth of FeO films on different substrate has made it possible to study the properties of the single crystalline magnetite film. We have recently succeeded to grow FeO thin film on GaAs and studied its magnetic property. [3, 4] InAs, one of the narrow gap semiconductors, has a higher low-field mobility than that of the GaAs, which makes it an excellent candidate for high speed field effect transistors. In this paper, we report the epitaxial growth and the magnetic property of different thickness of ultrathin FeO film on InAs(100).",

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AU - Huang, Z.C.

AU - Zhai, Y.

AU - Xu, Y.B.

AU - Wu, J.

AU - Thompson, S.M.

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Magnetic property of ultrathin single crystal FeO film on InAs(100)

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