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Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy

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Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy. / Tsuchiya, Tomoki; Roy, Tufan; Elphick, Kelvin; Okabayashi, Jun; Bainsla, Lakhan; Ichinose, Tomohiro; Suzuki, Kazuya; Tsujikawa, Masahito; Shirai, Masafumi; Hirohata, Atsufumi; Mizukami, Shigemi.

In: PHYSICAL REVIEW MATERIALS, Vol. 3, No. 8, 084403, 05.08.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Tsuchiya, T, Roy, T, Elphick, K, Okabayashi, J, Bainsla, L, Ichinose, T, Suzuki, K, Tsujikawa, M, Shirai, M, Hirohata, A & Mizukami, S 2019, 'Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy', PHYSICAL REVIEW MATERIALS, vol. 3, no. 8, 084403. https://doi.org/10.1103/PhysRevMaterials.3.084403

APA

Tsuchiya, T., Roy, T., Elphick, K., Okabayashi, J., Bainsla, L., Ichinose, T., Suzuki, K., Tsujikawa, M., Shirai, M., Hirohata, A., & Mizukami, S. (2019). Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy. PHYSICAL REVIEW MATERIALS, 3(8), [084403]. https://doi.org/10.1103/PhysRevMaterials.3.084403

Vancouver

Tsuchiya T, Roy T, Elphick K, Okabayashi J, Bainsla L, Ichinose T et al. Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy. PHYSICAL REVIEW MATERIALS. 2019 Aug 5;3(8). 084403. https://doi.org/10.1103/PhysRevMaterials.3.084403

Author

Tsuchiya, Tomoki ; Roy, Tufan ; Elphick, Kelvin ; Okabayashi, Jun ; Bainsla, Lakhan ; Ichinose, Tomohiro ; Suzuki, Kazuya ; Tsujikawa, Masahito ; Shirai, Masafumi ; Hirohata, Atsufumi ; Mizukami, Shigemi. / Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy. In: PHYSICAL REVIEW MATERIALS. 2019 ; Vol. 3, No. 8.

Bibtex - Download

@article{680ae2ebe81448789a6d5b5555efd72e,
title = "Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy",
abstract = "The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a B2-ordered phase. The saturation magnetization is 380 emu/cm3, almost the same as the value given by the Slater–Pauling–like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the Y -ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.",
author = "Tomoki Tsuchiya and Tufan Roy and Kelvin Elphick and Jun Okabayashi and Lakhan Bainsla and Tomohiro Ichinose and Kazuya Suzuki and Masahito Tsujikawa and Masafumi Shirai and Atsufumi Hirohata and Shigemi Mizukami",
note = "{\textcopyright} 2019 American Physical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details. ",
year = "2019",
month = aug,
day = "5",
doi = "10.1103/PhysRevMaterials.3.084403",
language = "English",
volume = "3",
journal = "PHYSICAL REVIEW MATERIALS",
issn = "2475-9953",
publisher = "American Physical Society",
number = "8",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy

AU - Tsuchiya, Tomoki

AU - Roy, Tufan

AU - Elphick, Kelvin

AU - Okabayashi, Jun

AU - Bainsla, Lakhan

AU - Ichinose, Tomohiro

AU - Suzuki, Kazuya

AU - Tsujikawa, Masahito

AU - Shirai, Masafumi

AU - Hirohata, Atsufumi

AU - Mizukami, Shigemi

N1 - © 2019 American Physical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

PY - 2019/8/5

Y1 - 2019/8/5

N2 - The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a B2-ordered phase. The saturation magnetization is 380 emu/cm3, almost the same as the value given by the Slater–Pauling–like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the Y -ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

AB - The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a B2-ordered phase. The saturation magnetization is 380 emu/cm3, almost the same as the value given by the Slater–Pauling–like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the Y -ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

U2 - 10.1103/PhysRevMaterials.3.084403

DO - 10.1103/PhysRevMaterials.3.084403

M3 - Article

VL - 3

JO - PHYSICAL REVIEW MATERIALS

JF - PHYSICAL REVIEW MATERIALS

SN - 2475-9953

IS - 8

M1 - 084403

ER -

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