Magnetization dynamics at finite temperature in CoFeB–MgO based MTJs

Sutee Sampan-A-Pai; Rattaphon Phoomatna; Worawut Boonruesi; Andrea Meo; Jessada Chureemart; Richard F.L. Evans; Roy W. Chantrell; Phanwadee Chureemart

doi:10.1038/s41598-023-29597-7

Magnetization dynamics at finite temperature in CoFeB–MgO based MTJs

Sutee Sampan-A-Pai, Rattaphon Phoomatna, Worawut Boonruesi, Andrea Meo^*, Jessada Chureemart, Richard F.L. Evans, Roy W. Chantrell, Phanwadee Chureemart^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The discovery of magnetization switching via spin transfer torque (STT) in PMA-based MTJs has led to the development of next-generation magnetic memory technology with high operating speed, low power consumption and high scalability. In this work, we theoretically investigate the influence of finite size and temperature on the mechanism of magnetization switching in CoFeB–MgO based MTJ to get better understanding of STT-MRAM fundamentals and design. An atomistic model coupled with simultaneous solution of the spin accumulation is employed. The results reveal that the incoherent switching process in MTJ strongly depends on the system size and temperature. At 0 K, the coherent switching mode can only be observed in MTJs with the diameter less than 20 nm. However, at any finite temperature, incoherent magnetization switching is thermally excited. Furthermore, increasing temperature results in decreasing switching time of the magnetization. We conclude that temperature dependent properties and thermally driven reversal are important considerations for the design and development of advanced MRAM systems.

Original language	English
Article number	2637
Number of pages	11
Journal	Scientific reports
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41598-023-29597-7
Publication status	Published - 14 Feb 2023

Bibliographical note

Funding Information:
P.C. and J. C. gratefully acknowledge the funding Thailand Science Research and Innovation (TSRI) and Mahasarakham university.

Publisher Copyright:
© 2023, The Author(s).

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title = "Magnetization dynamics at finite temperature in CoFeB–MgO based MTJs",

abstract = "The discovery of magnetization switching via spin transfer torque (STT) in PMA-based MTJs has led to the development of next-generation magnetic memory technology with high operating speed, low power consumption and high scalability. In this work, we theoretically investigate the influence of finite size and temperature on the mechanism of magnetization switching in CoFeB–MgO based MTJ to get better understanding of STT-MRAM fundamentals and design. An atomistic model coupled with simultaneous solution of the spin accumulation is employed. The results reveal that the incoherent switching process in MTJ strongly depends on the system size and temperature. At 0 K, the coherent switching mode can only be observed in MTJs with the diameter less than 20 nm. However, at any finite temperature, incoherent magnetization switching is thermally excited. Furthermore, increasing temperature results in decreasing switching time of the magnetization. We conclude that temperature dependent properties and thermally driven reversal are important considerations for the design and development of advanced MRAM systems.",

author = "Sutee Sampan-A-Pai and Rattaphon Phoomatna and Worawut Boonruesi and Andrea Meo and Jessada Chureemart and Evans, {Richard F.L.} and Chantrell, {Roy W.} and Phanwadee Chureemart",

note = "Funding Information: P.C. and J. C. gratefully acknowledge the funding Thailand Science Research and Innovation (TSRI) and Mahasarakham university. Publisher Copyright: {\textcopyright} 2023, The Author(s).",

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doi = "10.1038/s41598-023-29597-7",

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AU - Sampan-A-Pai, Sutee

AU - Phoomatna, Rattaphon

AU - Boonruesi, Worawut

AU - Meo, Andrea

AU - Chureemart, Jessada

AU - Evans, Richard F.L.

AU - Chantrell, Roy W.

AU - Chureemart, Phanwadee

PY - 2023/2/14

Y1 - 2023/2/14

N2 - The discovery of magnetization switching via spin transfer torque (STT) in PMA-based MTJs has led to the development of next-generation magnetic memory technology with high operating speed, low power consumption and high scalability. In this work, we theoretically investigate the influence of finite size and temperature on the mechanism of magnetization switching in CoFeB–MgO based MTJ to get better understanding of STT-MRAM fundamentals and design. An atomistic model coupled with simultaneous solution of the spin accumulation is employed. The results reveal that the incoherent switching process in MTJ strongly depends on the system size and temperature. At 0 K, the coherent switching mode can only be observed in MTJs with the diameter less than 20 nm. However, at any finite temperature, incoherent magnetization switching is thermally excited. Furthermore, increasing temperature results in decreasing switching time of the magnetization. We conclude that temperature dependent properties and thermally driven reversal are important considerations for the design and development of advanced MRAM systems.

AB - The discovery of magnetization switching via spin transfer torque (STT) in PMA-based MTJs has led to the development of next-generation magnetic memory technology with high operating speed, low power consumption and high scalability. In this work, we theoretically investigate the influence of finite size and temperature on the mechanism of magnetization switching in CoFeB–MgO based MTJ to get better understanding of STT-MRAM fundamentals and design. An atomistic model coupled with simultaneous solution of the spin accumulation is employed. The results reveal that the incoherent switching process in MTJ strongly depends on the system size and temperature. At 0 K, the coherent switching mode can only be observed in MTJs with the diameter less than 20 nm. However, at any finite temperature, incoherent magnetization switching is thermally excited. Furthermore, increasing temperature results in decreasing switching time of the magnetization. We conclude that temperature dependent properties and thermally driven reversal are important considerations for the design and development of advanced MRAM systems.

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Magnetization dynamics at finite temperature in CoFeB–MgO based MTJs

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