Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)

T. J. Wood; C. Eames; C. Bonet; M. B. Reakes; T. C. Q. Noakes; P. Bailey; S. P. Tear

doi:10.1103/PhysRevB.78.035423

Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)

T. J. Wood, C. Eames, C. Bonet, M. B. Reakes, T. C. Q. Noakes, P. Bailey, S. P. Tear

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.

Original language	English
Article number	035423
Pages (from-to)	-
Number of pages	8
Journal	Physical Review B
Volume	78
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.78.035423
Publication status	Published - 15 Jul 2008

Keywords

SCANNING-TUNNELING-MICROSCOPY
GD DISILICIDE NANOWIRES
ELECTRON-MICROSCOPY
THIN-FILMS
SI(001)
SURFACES
SI(100)
SI(111)
INTERFACES
ARRAYS

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10.1103/PhysRevB.78.035423

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title = "Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)",

abstract = "We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.",

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author = "Wood, {T. J.} and C. Eames and C. Bonet and Reakes, {M. B.} and Noakes, {T. C. Q.} and P. Bailey and Tear, {S. P.}",

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doi = "10.1103/PhysRevB.78.035423",

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AU - Wood, T. J.

AU - Eames, C.

AU - Bonet, C.

AU - Reakes, M. B.

AU - Noakes, T. C. Q.

AU - Bailey, P.

AU - Tear, S. P.

PY - 2008/7/15

Y1 - 2008/7/15

N2 - We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.

AB - We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.

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KW - ELECTRON-MICROSCOPY

KW - THIN-FILMS

KW - SI(001)

KW - SURFACES

KW - SI(100)

KW - SI(111)

KW - INTERFACES

KW - ARRAYS

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U2 - 10.1103/PhysRevB.78.035423

DO - 10.1103/PhysRevB.78.035423

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JO - Physical Review B

JF - Physical Review B

IS - 3

M1 - 035423

ER -

Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)

Abstract

Keywords

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