Method of pinning domain walls in a nanowire magnetic memory device

Kevin Dermot O'Grady; Atsufumi Hirohata; Gonzalo Vallejo Fernandez

Method of pinning domain walls in a nanowire magnetic memory device

Kevin Dermot O'Grady (Inventor), Atsufumi Hirohata (Inventor), Gonzalo Vallejo Fernandez (Inventor)

Research output: Patent

Abstract

There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.

Original language	English
Patent number	WO/2013/054098
IPC	G11C 19/08 (2006.01), G11C 11/14 (2006.01)
Priority date	10/10/11
Publication status	Published - 18 Apr 2013

Access to Document

http://patentscope.wipo.int/search/en/WO2013054098

Cite this

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title = "Method of pinning domain walls in a nanowire magnetic memory device",

abstract = "There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.",

author = "O'Grady, {Kevin Dermot} and Atsufumi Hirohata and {Vallejo Fernandez}, Gonzalo",

year = "2013",

month = apr,

day = "18",

language = "English",

type = "Patent",

note = "WO/2013/054098 ; G11C 19/08 (2006.01), G11C 11/14 (2006.01)",

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AU - O'Grady, Kevin Dermot

AU - Hirohata, Atsufumi

AU - Vallejo Fernandez, Gonzalo

PY - 2013/4/18

Y1 - 2013/4/18

N2 - There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.

AB - There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.

M3 - Patent

M1 - WO/2013/054098

ER -