Abstract
Scanning tunnelling microscopy has been used to investigate the surface structure of the (root 3 x root 3)R30 degrees-Cu2Si surface silicide formed on Cu(111) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 A variation in height on the lateral scale of a minimum of 26 angstrom. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution. (c) 2005 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 47-52 |
| Number of pages | 6 |
| Journal | Surface Science |
| Volume | 585 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1 Jul 2005 |
Keywords
- scanning tunnelling microscopy
- surface structure
- morphology
- roughness
- and topography
- compound formation
- copper
- silicides
- low index single crystal surfaces
- ATOMIC-STRUCTURE
- INITIAL-STAGES
- ALLOY
- ADSORPTION
- SILANE
- DECOMPOSITION
- CU/SI(111)
- DYNAMICS
- ORIGIN
- PHASES