Microstructural study of quantum well degradation in ZnSe-based laser diodes

E. Roventa, R. Kroger, M. Klude, A. Ueta, G. Alexe, P. Ryder, D. Hommel

Research output: Book/ReportBook


The possibility to grow CdZnSSe quantum structures with a high structural quality is extremely important for light emitting devices in the blue-green spectral range. However, during device operation the degradation of the quantum well reduces the lifetime severely due to the formation of dark spot and dark line defects, which are not clearly understood. To investigate the mechanisms of defects formation degradation studies were performed for ZnSe-based laser diodes with quaternary CdZnSSe quantum well structures by means of electroluminescence, high-resolution X-ray diffraction and transmission electron microscopy. It was found that the degradation is closely connected to a blue shift of the emitted light and the formation of defects which are confined near to the quantum well. A partial broadening of the quantum well could be observed, which is attributed to the outdiffusion of Cd from the active region. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageUndefined/Unknown
Publication statusPublished - 2004

Publication series

Name11th International Conference on Ii-Vi Compounds

Bibliographical note

Times Cited: 0 II-VI 2003 11th International Conference on II-VI Compounds SEP 22-26, 2003 NIAGARA FALLS, NY

Cite this