Microwave-induced plasma heating and synthesis: in situ temperature measurement of metal oxides and reactions to form ternary oxides

Yi-Hsin Chou; Adam J. Morgan; Nicole S. Hondow; Rik Brydson; Richard E. Douthwaite

doi:10.1039/c002594a

Microwave-induced plasma heating and synthesis: in situ temperature measurement of metal oxides and reactions to form ternary oxides

Yi-Hsin Chou, Adam J. Morgan, Nicole S. Hondow, Rik Brydson, Richard E. Douthwaite

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

Direct microwave synthesis between solids is limited by the restricted number of materials that exhibit microwave heating at room temperature. The dielectric properties of most materials dictate that microwave heating can occur at higher temperatures, primarily due to increasing conduction losses. Microwave-induced plasma promoted microwave heating circumvents the requirement for room temperature microwave heating allowing microwave methods to be applied to a greater range of materials. For example, MgO heats to >1700 degrees C using an O-2 plasma and 900 W magnetron power. Here we demonstrate that in situ temperature measurements can be used to identify binary oxides that exhibit significant plasma promoted heating. Furthermore, reactions to form ternary oxides can be monitored to determine if reactions are driven by the dielectric properties of the precursor(s) or product.

Original language	English
Pages (from-to)	6062-6066
Number of pages	5
Journal	Dalton Transactions
Volume	39
Issue number	26
DOIs	https://doi.org/10.1039/c002594a
Publication status	Published - 14 Jul 2010

Keywords

ORGANIC-SYNTHESIS
THERMAL RUNAWAY
CHEMISTRY
CERAMICS
NITRIDE
PARAMETERS
CRYSTALS
MGAL2O4
POWDERS
SPINEL

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10.1039/c002594a

http://pubs.rsc.org/en/Content/ArticleLanding/2010/DT/c002594a

Cite this

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title = "Microwave-induced plasma heating and synthesis: in situ temperature measurement of metal oxides and reactions to form ternary oxides",

abstract = "Direct microwave synthesis between solids is limited by the restricted number of materials that exhibit microwave heating at room temperature. The dielectric properties of most materials dictate that microwave heating can occur at higher temperatures, primarily due to increasing conduction losses. Microwave-induced plasma promoted microwave heating circumvents the requirement for room temperature microwave heating allowing microwave methods to be applied to a greater range of materials. For example, MgO heats to >1700 degrees C using an O-2 plasma and 900 W magnetron power. Here we demonstrate that in situ temperature measurements can be used to identify binary oxides that exhibit significant plasma promoted heating. Furthermore, reactions to form ternary oxides can be monitored to determine if reactions are driven by the dielectric properties of the precursor(s) or product.",

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AU - Chou, Yi-Hsin

AU - Morgan, Adam J.

AU - Hondow, Nicole S.

AU - Brydson, Rik

AU - Douthwaite, Richard E.

PY - 2010/7/14

Y1 - 2010/7/14

N2 - Direct microwave synthesis between solids is limited by the restricted number of materials that exhibit microwave heating at room temperature. The dielectric properties of most materials dictate that microwave heating can occur at higher temperatures, primarily due to increasing conduction losses. Microwave-induced plasma promoted microwave heating circumvents the requirement for room temperature microwave heating allowing microwave methods to be applied to a greater range of materials. For example, MgO heats to >1700 degrees C using an O-2 plasma and 900 W magnetron power. Here we demonstrate that in situ temperature measurements can be used to identify binary oxides that exhibit significant plasma promoted heating. Furthermore, reactions to form ternary oxides can be monitored to determine if reactions are driven by the dielectric properties of the precursor(s) or product.

AB - Direct microwave synthesis between solids is limited by the restricted number of materials that exhibit microwave heating at room temperature. The dielectric properties of most materials dictate that microwave heating can occur at higher temperatures, primarily due to increasing conduction losses. Microwave-induced plasma promoted microwave heating circumvents the requirement for room temperature microwave heating allowing microwave methods to be applied to a greater range of materials. For example, MgO heats to >1700 degrees C using an O-2 plasma and 900 W magnetron power. Here we demonstrate that in situ temperature measurements can be used to identify binary oxides that exhibit significant plasma promoted heating. Furthermore, reactions to form ternary oxides can be monitored to determine if reactions are driven by the dielectric properties of the precursor(s) or product.

KW - ORGANIC-SYNTHESIS

KW - THERMAL RUNAWAY

KW - CHEMISTRY

KW - CERAMICS

KW - NITRIDE

KW - PARAMETERS

KW - CRYSTALS

KW - MGAL2O4

KW - POWDERS

KW - SPINEL

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JO - Dalton Transactions

JF - Dalton Transactions

IS - 26

ER -

Microwave-induced plasma heating and synthesis: in situ temperature measurement of metal oxides and reactions to form ternary oxides

Abstract

Keywords

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