Models of oxygen vacancy defects involved in degradation of gate dielectrics

TY - CHAP

T1 - Models of oxygen vacancy defects involved in degradation of gate dielectrics

AU - Shluger, A.L.

AU - McKenna, K.P.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Capture and emission of carriers by point defects in gate dielectrics, such as SiO and HfO, and at their interfaces with the substrate is thought to be responsible for the performance and reliability issues in MOS devices, in particular, 1/f noise, negative bias temperature instability (NBTI), and long-term dielectric reliability and degradation. The ultra-thin silicon dioxide layer present at the interface between Si and high-k films plays a critical role in the performance of high-k gate oxide stacks. However, detailed atomistic models relating device electrical characteristics to the properties of defects in gate dielectrics are only starting to emerge. We review some of the theoretical models proposed for oxygen deficient defects in silica and hafnia and their charge trapping behavior. These models are related to physical characterization of degradation processes in CMOS devices.

AB - Capture and emission of carriers by point defects in gate dielectrics, such as SiO and HfO, and at their interfaces with the substrate is thought to be responsible for the performance and reliability issues in MOS devices, in particular, 1/f noise, negative bias temperature instability (NBTI), and long-term dielectric reliability and degradation. The ultra-thin silicon dioxide layer present at the interface between Si and high-k films plays a critical role in the performance of high-k gate oxide stacks. However, detailed atomistic models relating device electrical characteristics to the properties of defects in gate dielectrics are only starting to emerge. We review some of the theoretical models proposed for oxygen deficient defects in silica and hafnia and their charge trapping behavior. These models are related to physical characterization of degradation processes in CMOS devices.

UR - http://www.scopus.com/inward/record.url?scp=84881016845&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2013.6532018

DO - 10.1109/IRPS.2013.6532018

M3 - Chapter

AN - SCOPUS:84881016845

SN - 9781479901135

SP - 5A.1.1 - 5A.1.9

BT - IEEE International Reliability Physics Symposium Proceedings

PB - IEEE

ER -