Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal

C. Bonet; M. M. El-Gomati; J. A. D. Matthew; S. P. Tear

doi:10.1088/1742-6596/209/1/012070

Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal

C. Bonet, M. M. El-Gomati, J. A. D. Matthew, S. P. Tear

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanotechnology places increasing demands on techniques for sample characterisation on the sub-100 rim length scale, and the low-loss electron (LLE) signal may provide one possible way of addressing this need Simulations of the LLE signal from a line-scan across a semiconductor superlattice structure have been performed using two different Monte Carlo models in order to assess their effectiveness in predicting spatial resolution for compositional imaging Additionally, experimental measurements of LLE data using a detector added to a scanning electron microscope were made to investigate compositional contrast

Original language	English
Title of host publication	16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS
Editors	T Walther, PD Nellist, JL Hutchison, AG Cullis
Place of Publication	BRISTOL
Publisher	IOP Publishing
Pages	-
Number of pages	4
ISBN (Print)	*****************
DOIs	https://doi.org/10.1088/1742-6596/209/1/012070
Publication status	Published - 2010
Event	16th International Conference on Microscopy of Semiconducting Materials - Oxford Duration: 17 Mar 2009 → 20 Mar 2009

Conference

Conference	16th International Conference on Microscopy of Semiconducting Materials
City	Oxford
Period	17/03/09 → 20/03/09

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10.1088/1742-6596/209/1/012070

Cite this

Bonet, C., El-Gomati, M. M., Matthew, J. A. D., & Tear, S. P. (2010). Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal. In T. Walther, PD. Nellist, JL. Hutchison, & AG. Cullis (Eds.), 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS (pp. -). IOP Publishing. https://doi.org/10.1088/1742-6596/209/1/012070

@inproceedings{e2c1c87af8a24207bece9d331c499504,

title = "Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal",

abstract = "Nanotechnology places increasing demands on techniques for sample characterisation on the sub-100 rim length scale, and the low-loss electron (LLE) signal may provide one possible way of addressing this need Simulations of the LLE signal from a line-scan across a semiconductor superlattice structure have been performed using two different Monte Carlo models in order to assess their effectiveness in predicting spatial resolution for compositional imaging Additionally, experimental measurements of LLE data using a detector added to a scanning electron microscope were made to investigate compositional contrast",

author = "C. Bonet and El-Gomati, {M. M.} and Matthew, {J. A. D.} and Tear, {S. P.}",

year = "2010",

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editor = "T Walther and PD Nellist and JL Hutchison and AG Cullis",

booktitle = "16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS",

publisher = "IOP Publishing",

address = "United Kingdom",

note = "16th International Conference on Microscopy of Semiconducting Materials ; Conference date: 17-03-2009 Through 20-03-2009",

}

Bonet, C, El-Gomati, MM, Matthew, JAD & Tear, SP 2010, Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal. in T Walther, PD Nellist, JL Hutchison & AG Cullis (eds), 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS. IOP Publishing, BRISTOL, pp. -, 16th International Conference on Microscopy of Semiconducting Materials, Oxford, 17/03/09. https://doi.org/10.1088/1742-6596/209/1/012070

Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal. / Bonet, C.; El-Gomati, M. M.; Matthew, J. A. D. et al.
16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS. ed. / T Walther; PD Nellist; JL Hutchison; AG Cullis. BRISTOL: IOP Publishing, 2010. p. -.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal

AU - Bonet, C.

AU - El-Gomati, M. M.

AU - Matthew, J. A. D.

AU - Tear, S. P.

PY - 2010

Y1 - 2010

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AB - Nanotechnology places increasing demands on techniques for sample characterisation on the sub-100 rim length scale, and the low-loss electron (LLE) signal may provide one possible way of addressing this need Simulations of the LLE signal from a line-scan across a semiconductor superlattice structure have been performed using two different Monte Carlo models in order to assess their effectiveness in predicting spatial resolution for compositional imaging Additionally, experimental measurements of LLE data using a detector added to a scanning electron microscope were made to investigate compositional contrast

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DO - 10.1088/1742-6596/209/1/012070

M3 - Conference contribution

SN - *****************

SP - -

BT - 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS

A2 - Walther, T

A2 - Nellist, PD

A2 - Hutchison, JL

A2 - Cullis, AG

PB - IOP Publishing

CY - BRISTOL

T2 - 16th International Conference on Microscopy of Semiconducting Materials

Y2 - 17 March 2009 through 20 March 2009

ER -

Bonet C, El-Gomati MM, Matthew JAD, Tear SP. Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal. In Walther T, Nellist PD, Hutchison JL, Cullis AG, editors, 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS. BRISTOL: IOP Publishing. 2010. p. - doi: 10.1088/1742-6596/209/1/012070

Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal

Abstract

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