Narrow asymmetric waveguide design for high-power semiconductor lasers

Eugene Avrutin; Boris Ryvkin

Narrow asymmetric waveguide design for high-power semiconductor lasers

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-power semiconductor lasers are widely used for pumping Erbium-doped and Raman amplifiers as well as for a number of non-communications applications. The record performance so far has been achieved using broadened symmetric waveguide design, which however may have significant limitations at very high current densities. We assess these limitations and discuss the advantages of our recently proposed narrow asymmetric waveguide design over the broadened symmetric one in terms of internal and output efficiency, far field, and heating properties. An analytical theory is outlined and verified by numerical simulations.

Original language	English
Title of host publication	ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 2, Proceedings
Editors	M Marciniak
Place of Publication	NEW YORK
Publisher	IEEE
Pages	246-249
Number of pages	4
ISBN (Print)	1-4244-0235-2
Publication status	Published - 2006
Event	8th International Conference on Transparent Optical Networks - Nottingham Duration: 18 Jun 2006 → 22 Jun 2006

Conference

Conference	8th International Conference on Transparent Optical Networks
City	Nottingham
Period	18/06/06 → 22/06/06

Keywords

high-power lasers
efficiency
far field
modelling
DIODE-LASERS

Cite this

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title = "Narrow asymmetric waveguide design for high-power semiconductor lasers",

abstract = "High-power semiconductor lasers are widely used for pumping Erbium-doped and Raman amplifiers as well as for a number of non-communications applications. The record performance so far has been achieved using broadened symmetric waveguide design, which however may have significant limitations at very high current densities. We assess these limitations and discuss the advantages of our recently proposed narrow asymmetric waveguide design over the broadened symmetric one in terms of internal and output efficiency, far field, and heating properties. An analytical theory is outlined and verified by numerical simulations.",

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author = "Eugene Avrutin and Boris Ryvkin",

year = "2006",

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editor = "M Marciniak",

booktitle = "ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 2, Proceedings",

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note = "8th International Conference on Transparent Optical Networks ; Conference date: 18-06-2006 Through 22-06-2006",

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T1 - Narrow asymmetric waveguide design for high-power semiconductor lasers

AU - Avrutin, Eugene

AU - Ryvkin, Boris

PY - 2006

Y1 - 2006

N2 - High-power semiconductor lasers are widely used for pumping Erbium-doped and Raman amplifiers as well as for a number of non-communications applications. The record performance so far has been achieved using broadened symmetric waveguide design, which however may have significant limitations at very high current densities. We assess these limitations and discuss the advantages of our recently proposed narrow asymmetric waveguide design over the broadened symmetric one in terms of internal and output efficiency, far field, and heating properties. An analytical theory is outlined and verified by numerical simulations.

AB - High-power semiconductor lasers are widely used for pumping Erbium-doped and Raman amplifiers as well as for a number of non-communications applications. The record performance so far has been achieved using broadened symmetric waveguide design, which however may have significant limitations at very high current densities. We assess these limitations and discuss the advantages of our recently proposed narrow asymmetric waveguide design over the broadened symmetric one in terms of internal and output efficiency, far field, and heating properties. An analytical theory is outlined and verified by numerical simulations.

KW - high-power lasers

KW - efficiency

KW - far field

KW - modelling

KW - DIODE-LASERS

M3 - Conference contribution

SN - 1-4244-0235-2

SP - 246

EP - 249

BT - ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 2, Proceedings

A2 - Marciniak, M

PB - IEEE

CY - NEW YORK

T2 - 8th International Conference on Transparent Optical Networks

Y2 - 18 June 2006 through 22 June 2006

ER -