Abstract
We propose and verify theoretically a Fabry-Perot semiconductor laser structure using narrow asymmetric waveguides (NAW) for the purpose of achieving higher temperature stability of the lasing wavelength compared to structures with standard symmetrical waveguides, for applications including pumping fibre amplifiers and lasers in communications systems. The mechanism of the low thermal sensitivity is the uniquely strong wavelength dependence of the confinement factor near waveguide cutoff, which increases the blue shift of the modal gain peak with carrier density and helps offset the bandgap shrinkage with temperature.
Original language | English |
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Title of host publication | ICTON: 2009 11TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS |
Place of Publication | NEW YORK |
Publisher | IEEE |
Pages | 1363-1366 |
Number of pages | 4 |
Volume | 1-6 |
ISBN (Print) | 978-1-4244-4825-8 |
Publication status | Published - 2009 |
Keywords
- semiconductor lasers
- high-power lasers
- semiconductor laser theory
- QUANTUM-WELL LASERS
- DIODE-LASERS
- POWER