Non-equilibrium electron transport in degenerate nitride heterostructures - dynamic screening effects

D R  Anderson; M  Babiker; C R  Bennett; M I J  Probert

doi:10.1016/S1386-9477(02)00795-6

Non-equilibrium electron transport in degenerate nitride heterostructures - dynamic screening effects

D R Anderson, M Babiker, C R Bennett, M I J Probert

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We show how dynamic screening effects on non-equilibrium electron transport can be incorporated in the case of electronically dense GaN-based quantum wells. The theory is based on the Boltzmann equation, leading to evaluations of the momentum relaxation time and, hence, the electron mobility in these heterostructures. We find that both screening and anti-screening effects are manifest as the electron density varies. However, anti-screening dominates over a wide range of densities, with screening commencing at densities appropriate for phonon-plasmon coupling. (C) 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	272-275
Number of pages	4
Journal	Physica E-Low Dimensional Systems and Nanostructures
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00795-6
Publication status	Published - Apr 2003

Keywords

GaN
heterostructure
screening
electric transport
POLAR-OPTICAL-PHONON
GAN

Access to Document

10.1016/S1386-9477(02)00795-6

Cite this

@article{18d624d16a0a42f2a96487a4d348bc19,

title = "Non-equilibrium electron transport in degenerate nitride heterostructures - dynamic screening effects",

abstract = "We show how dynamic screening effects on non-equilibrium electron transport can be incorporated in the case of electronically dense GaN-based quantum wells. The theory is based on the Boltzmann equation, leading to evaluations of the momentum relaxation time and, hence, the electron mobility in these heterostructures. We find that both screening and anti-screening effects are manifest as the electron density varies. However, anti-screening dominates over a wide range of densities, with screening commencing at densities appropriate for phonon-plasmon coupling. (C) 2002 Elsevier Science B.V. All rights reserved.",

keywords = "GaN, heterostructure, screening, electric transport, POLAR-OPTICAL-PHONON, GAN",

author = "Anderson, {D R} and M Babiker and Bennett, {C R} and Probert, {M I J}",

year = "2003",

month = apr,

doi = "10.1016/S1386-9477(02)00795-6",

language = "English",

volume = "17",

pages = "272--275",

journal = "Physica E-Low Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Non-equilibrium electron transport in degenerate nitride heterostructures - dynamic screening effects

AU - Anderson, D R

AU - Babiker, M

AU - Bennett, C R

AU - Probert, M I J

PY - 2003/4

Y1 - 2003/4

N2 - We show how dynamic screening effects on non-equilibrium electron transport can be incorporated in the case of electronically dense GaN-based quantum wells. The theory is based on the Boltzmann equation, leading to evaluations of the momentum relaxation time and, hence, the electron mobility in these heterostructures. We find that both screening and anti-screening effects are manifest as the electron density varies. However, anti-screening dominates over a wide range of densities, with screening commencing at densities appropriate for phonon-plasmon coupling. (C) 2002 Elsevier Science B.V. All rights reserved.

AB - We show how dynamic screening effects on non-equilibrium electron transport can be incorporated in the case of electronically dense GaN-based quantum wells. The theory is based on the Boltzmann equation, leading to evaluations of the momentum relaxation time and, hence, the electron mobility in these heterostructures. We find that both screening and anti-screening effects are manifest as the electron density varies. However, anti-screening dominates over a wide range of densities, with screening commencing at densities appropriate for phonon-plasmon coupling. (C) 2002 Elsevier Science B.V. All rights reserved.

KW - GaN

KW - heterostructure

KW - screening

KW - electric transport

KW - POLAR-OPTICAL-PHONON

KW - GAN

U2 - 10.1016/S1386-9477(02)00795-6

DO - 10.1016/S1386-9477(02)00795-6

M3 - Article

SN - 1386-9477

VL - 17

SP - 272

EP - 275

JO - Physica E-Low Dimensional Systems and Nanostructures

JF - Physica E-Low Dimensional Systems and Nanostructures

IS - 1-4

ER -