Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

D.E. Parkes; A.T. Hindmarch; P. Wadley; F. McGee; C.R. Staddon; K.W. Edmonds; R.P. Campion; B.L. Gallagher; A.W. Rushforth; S.A. Cavill

doi:10.1063/1.4745789

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

D.E. Parkes, A.T. Hindmarch, P. Wadley, F. McGee, C.R. Staddon, K.W. Edmonds, R.P. Campion, B.L. Gallagher, A.W. Rushforth, S.A. Cavill

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe Ga film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe Ga is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	7
DOIs	https://doi.org/10.1063/1.4745789
Publication status	Published - 13 Aug 2012

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abstract = "We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe Ga film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe Ga is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.",

author = "D.E. Parkes and A.T. Hindmarch and P. Wadley and F. McGee and C.R. Staddon and K.W. Edmonds and R.P. Campion and B.L. Gallagher and A.W. Rushforth and S.A. Cavill",

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AU - Parkes, D.E.

AU - Hindmarch, A.T.

AU - Wadley, P.

AU - McGee, F.

AU - Staddon, C.R.

AU - Edmonds, K.W.

AU - Campion, R.P.

AU - Gallagher, B.L.

AU - Rushforth, A.W.

AU - Cavill, S.A.

PY - 2012/8/13

Y1 - 2012/8/13

N2 - We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe Ga film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe Ga is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

AB - We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe Ga film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe Ga is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

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VL - 101

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

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