Nucleation and growth of CVD Cu films

R. Kroger; M. Eizenberg; D. Cong; N. Yoshida; L. Y. Chen; L. Chen

Nucleation and growth of CVD Cu films

R. Kroger, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen, L. Chen

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

In this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used to characterize the dependence of morphology and microstructure on deposition time. XRD measurements were carried out to study the orientation of the polycrystalline films. Atomic force microscopy was applied to investigate the surface topography. A random crystal orientation and an amorphous interlayer between the CVP Cu film and the barrier - leading to a poor adhesion performance of the CVD Cu films - were obtained on Ta and TIN, where island growth can be observed. A CVD Cu film deposited on top of PVD Cu leads to a highly preferred [111] orientation and a significantly improved adhesion of the Cu film. A PVD Cu seed layer as thin as 60 Angstrom was found to produce an epitaxially grown [111] textured Cu film. These results highlight the importance of the initial growth stages for both morphology and adhesion of the CVD Cu films.

Original language	Undefined/Unknown
Title of host publication	Advanced Interconnects and Contacts
Editors	D. C. Kikkawa T. Ozturk M. C. Tu K. N. Weitzman E. J. Edelstein
Pages	237-241
Number of pages	5
Volume	564
Publication status	Published - 1999

Publication series

Name	Materials Research Society Symposium Proceedings

Bibliographical note

Times Cited: 1 Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting APR 05-07, 1999 SAN FRANCISCO, CA Mat Res Soc; Adv Micro Devices Inc; IBM TJ Watson Res Ctr; Novellus Syst Inc

Cite this

@inbook{56c94f85120341698d1bb5983917368e,

title = "Nucleation and growth of CVD Cu films",

abstract = "In this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used to characterize the dependence of morphology and microstructure on deposition time. XRD measurements were carried out to study the orientation of the polycrystalline films. Atomic force microscopy was applied to investigate the surface topography. A random crystal orientation and an amorphous interlayer between the CVP Cu film and the barrier - leading to a poor adhesion performance of the CVD Cu films - were obtained on Ta and TIN, where island growth can be observed. A CVD Cu film deposited on top of PVD Cu leads to a highly preferred [111] orientation and a significantly improved adhesion of the Cu film. A PVD Cu seed layer as thin as 60 Angstrom was found to produce an epitaxially grown [111] textured Cu film. These results highlight the importance of the initial growth stages for both morphology and adhesion of the CVD Cu films.",

author = "R. Kroger and M. Eizenberg and D. Cong and N. Yoshida and Chen, {L. Y.} and L. Chen",

note = "Times Cited: 1 Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting APR 05-07, 1999 SAN FRANCISCO, CA Mat Res Soc; Adv Micro Devices Inc; IBM TJ Watson Res Ctr; Novellus Syst Inc",

year = "1999",

language = "Undefined/Unknown",

volume = "564",

series = "Materials Research Society Symposium Proceedings",

pages = "237--241",

editor = "Edelstein, {D. C. Kikkawa T. Ozturk M. C. Tu K. N. Weitzman E. J.}",

booktitle = "Advanced Interconnects and Contacts",

}

TY - CHAP

T1 - Nucleation and growth of CVD Cu films

AU - Kroger, R.

AU - Eizenberg, M.

AU - Cong, D.

AU - Yoshida, N.

AU - Chen, L. Y.

AU - Chen, L.

N1 - Times Cited: 1 Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting APR 05-07, 1999 SAN FRANCISCO, CA Mat Res Soc; Adv Micro Devices Inc; IBM TJ Watson Res Ctr; Novellus Syst Inc

PY - 1999

Y1 - 1999

N2 - In this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used to characterize the dependence of morphology and microstructure on deposition time. XRD measurements were carried out to study the orientation of the polycrystalline films. Atomic force microscopy was applied to investigate the surface topography. A random crystal orientation and an amorphous interlayer between the CVP Cu film and the barrier - leading to a poor adhesion performance of the CVD Cu films - were obtained on Ta and TIN, where island growth can be observed. A CVD Cu film deposited on top of PVD Cu leads to a highly preferred [111] orientation and a significantly improved adhesion of the Cu film. A PVD Cu seed layer as thin as 60 Angstrom was found to produce an epitaxially grown [111] textured Cu film. These results highlight the importance of the initial growth stages for both morphology and adhesion of the CVD Cu films.

AB - In this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used to characterize the dependence of morphology and microstructure on deposition time. XRD measurements were carried out to study the orientation of the polycrystalline films. Atomic force microscopy was applied to investigate the surface topography. A random crystal orientation and an amorphous interlayer between the CVP Cu film and the barrier - leading to a poor adhesion performance of the CVD Cu films - were obtained on Ta and TIN, where island growth can be observed. A CVD Cu film deposited on top of PVD Cu leads to a highly preferred [111] orientation and a significantly improved adhesion of the Cu film. A PVD Cu seed layer as thin as 60 Angstrom was found to produce an epitaxially grown [111] textured Cu film. These results highlight the importance of the initial growth stages for both morphology and adhesion of the CVD Cu films.

M3 - Chapter

VL - 564

T3 - Materials Research Society Symposium Proceedings

SP - 237

EP - 241

BT - Advanced Interconnects and Contacts

A2 - Edelstein, D. C. Kikkawa T. Ozturk M. C. Tu K. N. Weitzman E. J.

ER -