On the measurement of low energy backscattered and secondary electron coefficients

M M El Gomati; A M D Assa'd; T El Gomati; M Zadrazil

On the measurement of low energy backscattered and secondary electron coefficients

M M El Gomati, A M D Assa'd, T El Gomati, M Zadrazil

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on measurements of the backscattered and secondary electron coefficients in the energy range 250eV-6 keV which are collected in UHV from target surfaces that were cleaned by ion bombardment. Data collected under conventional SEM pressures and with electron energies <2 keV exhibit an unsystematic behaviour with respect to the target atomic number. The results obtained from clean surfaces show that for electron energies >600 eV, the backscattering coefficient increases with increased target atomic numbers. For lower electron energies, we see the influence of strong elastic scattering as a function of the target atomic number in a complex way. Secondary electron coefficients show similar behaviour to previously published data of a maximum yield at a given energy, albeit with different magnitudes and the energies they occur at.

Original language	English
Title of host publication	ELECTRON MICROSCOPY AND ANALYSIS 1997
Editors	JM Rodenburg
Place of Publication	BRISTOL
Publisher	IOP Publishing
Pages	265-268
Number of pages	4
ISBN (Print)	0-7503-0441-3
Publication status	Published - 1997
Event	1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97) - CAMBRIDGE Duration: 2 Sept 1997 → 5 Sept 1997

Conference

Conference	1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97)
City	CAMBRIDGE
Period	2/09/97 → 5/09/97

Cite this

@inproceedings{9c10203150834efba751290bc0c22c15,

title = "On the measurement of low energy backscattered and secondary electron coefficients",

abstract = "We report on measurements of the backscattered and secondary electron coefficients in the energy range 250eV-6 keV which are collected in UHV from target surfaces that were cleaned by ion bombardment. Data collected under conventional SEM pressures and with electron energies <2 keV exhibit an unsystematic behaviour with respect to the target atomic number. The results obtained from clean surfaces show that for electron energies >600 eV, the backscattering coefficient increases with increased target atomic numbers. For lower electron energies, we see the influence of strong elastic scattering as a function of the target atomic number in a complex way. Secondary electron coefficients show similar behaviour to previously published data of a maximum yield at a given energy, albeit with different magnitudes and the energies they occur at.",

author = "{El Gomati}, {M M} and Assa'd, {A M D} and {El Gomati}, T and M Zadrazil",

year = "1997",

language = "English",

isbn = "0-7503-0441-3",

pages = "265--268",

editor = "JM Rodenburg",

booktitle = "ELECTRON MICROSCOPY AND ANALYSIS 1997",

publisher = "IOP Publishing",

address = "United Kingdom",

note = "1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97) ; Conference date: 02-09-1997 Through 05-09-1997",

}

El Gomati, MM, Assa'd, AMD, El Gomati, T & Zadrazil, M 1997, On the measurement of low energy backscattered and secondary electron coefficients. in JM Rodenburg (ed.), ELECTRON MICROSCOPY AND ANALYSIS 1997. IOP Publishing, BRISTOL, pp. 265-268, 1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97), CAMBRIDGE, 2/09/97.

TY - GEN

T1 - On the measurement of low energy backscattered and secondary electron coefficients

AU - El Gomati, M M

AU - Assa'd, A M D

AU - El Gomati, T

AU - Zadrazil, M

PY - 1997

Y1 - 1997

N2 - We report on measurements of the backscattered and secondary electron coefficients in the energy range 250eV-6 keV which are collected in UHV from target surfaces that were cleaned by ion bombardment. Data collected under conventional SEM pressures and with electron energies <2 keV exhibit an unsystematic behaviour with respect to the target atomic number. The results obtained from clean surfaces show that for electron energies >600 eV, the backscattering coefficient increases with increased target atomic numbers. For lower electron energies, we see the influence of strong elastic scattering as a function of the target atomic number in a complex way. Secondary electron coefficients show similar behaviour to previously published data of a maximum yield at a given energy, albeit with different magnitudes and the energies they occur at.

AB - We report on measurements of the backscattered and secondary electron coefficients in the energy range 250eV-6 keV which are collected in UHV from target surfaces that were cleaned by ion bombardment. Data collected under conventional SEM pressures and with electron energies <2 keV exhibit an unsystematic behaviour with respect to the target atomic number. The results obtained from clean surfaces show that for electron energies >600 eV, the backscattering coefficient increases with increased target atomic numbers. For lower electron energies, we see the influence of strong elastic scattering as a function of the target atomic number in a complex way. Secondary electron coefficients show similar behaviour to previously published data of a maximum yield at a given energy, albeit with different magnitudes and the energies they occur at.

M3 - Conference contribution

SN - 0-7503-0441-3

SP - 265

EP - 268

BT - ELECTRON MICROSCOPY AND ANALYSIS 1997

A2 - Rodenburg, JM

PB - IOP Publishing

CY - BRISTOL

T2 - 1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97)

Y2 - 2 September 1997 through 5 September 1997

ER -