On the way to the II-VI quantum dot VCSEL

T. Passow; M. Klude; C. Kruse; K. Leonardi; R. Kroger; G. Alexe; K. Sebald; S. Ulrich; P. Michler; J. Gutowski; H. Heinke; D. Hommel

doi:10.1007/3-540-45618-x_2

On the way to the II-VI quantum dot VCSEL

T. Passow, M. Klude, C. Kruse, K. Leonardi, R. Kroger, G. Alexe, K. Sebald, S. Ulrich, P. Michler, J. Gutowski, H. Heinke, D. Hommel

Physics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Formation mechanisms of quantum (lots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T(0) value of about 1200K up to 100K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm(2). Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.

Original language	Undefined/Unknown
Title of host publication	Advances in Solid State Physics 42
Editors	B. Kramer
Pages	13-25
Number of pages	13
Volume	42
DOIs	https://doi.org/10.1007/3-540-45618-x_2
Publication status	Published - 2002

Publication series

Name	Advances in Solid State Physics

Bibliographical note

Times Cited: 5 Spring Meeting of the Deutsche-Physikalische-Gesellschaft MAR 25-29, 2002 REGENSBURG, GERMANY Deutsch Phys Gesell

Access to Document

10.1007/3-540-45618-x_2

Cite this

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title = "On the way to the II-VI quantum dot VCSEL",

abstract = "Formation mechanisms of quantum (lots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T(0) value of about 1200K up to 100K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm(2). Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.",

author = "T. Passow and M. Klude and C. Kruse and K. Leonardi and R. Kroger and G. Alexe and K. Sebald and S. Ulrich and P. Michler and J. Gutowski and H. Heinke and D. Hommel",

note = "Times Cited: 5 Spring Meeting of the Deutsche-Physikalische-Gesellschaft MAR 25-29, 2002 REGENSBURG, GERMANY Deutsch Phys Gesell",

year = "2002",

doi = "10.1007/3-540-45618-x_2",

language = "Undefined/Unknown",

volume = "42",

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TY - CHAP

T1 - On the way to the II-VI quantum dot VCSEL

AU - Passow, T.

AU - Klude, M.

AU - Kruse, C.

AU - Leonardi, K.

AU - Kroger, R.

AU - Alexe, G.

AU - Sebald, K.

AU - Ulrich, S.

AU - Michler, P.

AU - Gutowski, J.

AU - Heinke, H.

AU - Hommel, D.

N1 - Times Cited: 5 Spring Meeting of the Deutsche-Physikalische-Gesellschaft MAR 25-29, 2002 REGENSBURG, GERMANY Deutsch Phys Gesell

PY - 2002

Y1 - 2002

N2 - Formation mechanisms of quantum (lots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T(0) value of about 1200K up to 100K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm(2). Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.

AB - Formation mechanisms of quantum (lots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T(0) value of about 1200K up to 100K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm(2). Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.

U2 - 10.1007/3-540-45618-x_2

DO - 10.1007/3-540-45618-x_2

M3 - Chapter

VL - 42

T3 - Advances in Solid State Physics

SP - 13

EP - 25

BT - Advances in Solid State Physics 42

A2 - Kramer, B.

ER -