Abstract
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III-V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.
Original language | English |
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Article number | 105010 |
Number of pages | 9 |
Journal | Semiconductor science and technology |
Volume | 33 |
Issue number | 10 |
DOIs | |
Publication status | Published - 26 Sept 2018 |
Bibliographical note
© 2018 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.Keywords
- High power lasers
- semiconductor lasers