Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by strong doping of n-waveguides

Eugene Avrutin, Boris Ryvkin, Juha Tapio Kostamovaara

Research output: Contribution to journalArticlepeer-review


We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III-V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.
Original languageEnglish
Article number105010
Number of pages9
JournalSemiconductor science and technology
Issue number10
Publication statusPublished - 26 Sept 2018

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  • High power lasers
  • semiconductor lasers

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