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Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by strong doping of n-waveguides

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Publication details

JournalSemiconductor science and technology
DateAccepted/In press - 7 Sep 2018
DatePublished (current) - 26 Sep 2018
Issue number10
Number of pages9
Original languageEnglish


We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III-V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.

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© 2018 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.

    Research areas

  • High power lasers, semiconductor lasers

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