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Oscillatory Tunneling Magnetoresistance in Fe3O4/n-GaAs/Fe3O4 Junction

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JournalIEEE Transactions on Magnetics
DateE-pub ahead of print - 19 May 2015
DatePublished (current) - 1 Nov 2015
Issue number11
Volume51
Number of pages4
Early online date19/05/15
Original languageEnglish

Abstract

Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe3O4/n-GaAs/Fe3O4 junction with a Schottky barrier between half metallic Fe3O4 and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with the thickness of the GaAs channel. Compared with the conventional FM/I/NM/I/FM double tunneling junctions where FM is a ferromagnet, NM, a normal metal, and I, an insulating barrier, the TMR is much larger and the spin-dependent current transmits farther.

    Research areas

  • Magnetic tunneling junction, spin transport, theoretical calculation, Tunneling magnetoresistance

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