Oscillatory Tunneling Magnetoresistance in Fe3O4/n-GaAs/Fe3O4 Junction

Z. C. Huang; J. J. Yue; J. Wang; Y. Zhai; Y. B. Xu; B. P. Wang

doi:10.1109/TMAG.2015.2435038

Oscillatory Tunneling Magnetoresistance in Fe₃O₄/n-GaAs/Fe₃O₄ Junction

Z. C. Huang, J. J. Yue, J. Wang, Y. Zhai^*, Y. B. Xu, B. P. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe₃O₄/n-GaAs/Fe₃O₄ junction with a Schottky barrier between half metallic Fe₃O₄ and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with the thickness of the GaAs channel. Compared with the conventional FM/I/NM/I/FM double tunneling junctions where FM is a ferromagnet, NM, a normal metal, and I, an insulating barrier, the TMR is much larger and the spin-dependent current transmits farther.

Original language	English
Article number	1300604
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	51
Issue number	11
Early online date	19 May 2015
DOIs	https://doi.org/10.1109/TMAG.2015.2435038
Publication status	Published - 1 Nov 2015

Keywords

Magnetic tunneling junction
spin transport
theoretical calculation
Tunneling magnetoresistance

Access to Document

10.1109/TMAG.2015.2435038

Cite this

@article{73f12a445bef4526af020dfbffb4edbb,

title = "Oscillatory Tunneling Magnetoresistance in Fe3O4/n-GaAs/Fe3O4 Junction",

abstract = "Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe3O4/n-GaAs/Fe3O4 junction with a Schottky barrier between half metallic Fe3O4 and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with the thickness of the GaAs channel. Compared with the conventional FM/I/NM/I/FM double tunneling junctions where FM is a ferromagnet, NM, a normal metal, and I, an insulating barrier, the TMR is much larger and the spin-dependent current transmits farther.",

keywords = "Magnetic tunneling junction, spin transport, theoretical calculation, Tunneling magnetoresistance",

author = "Huang, {Z. C.} and Yue, {J. J.} and J. Wang and Y. Zhai and Xu, {Y. B.} and Wang, {B. P.}",

year = "2015",

month = nov,

day = "1",

doi = "10.1109/TMAG.2015.2435038",

language = "English",

volume = "51",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "IEEE",

number = "11",

}

TY - JOUR

T1 - Oscillatory Tunneling Magnetoresistance in Fe3O4/n-GaAs/Fe3O4 Junction

AU - Huang, Z. C.

AU - Yue, J. J.

AU - Wang, J.

AU - Zhai, Y.

AU - Xu, Y. B.

AU - Wang, B. P.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe3O4/n-GaAs/Fe3O4 junction with a Schottky barrier between half metallic Fe3O4 and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with the thickness of the GaAs channel. Compared with the conventional FM/I/NM/I/FM double tunneling junctions where FM is a ferromagnet, NM, a normal metal, and I, an insulating barrier, the TMR is much larger and the spin-dependent current transmits farther.

AB - Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe3O4/n-GaAs/Fe3O4 junction with a Schottky barrier between half metallic Fe3O4 and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with the thickness of the GaAs channel. Compared with the conventional FM/I/NM/I/FM double tunneling junctions where FM is a ferromagnet, NM, a normal metal, and I, an insulating barrier, the TMR is much larger and the spin-dependent current transmits farther.

KW - Magnetic tunneling junction

KW - spin transport

KW - theoretical calculation

KW - Tunneling magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=84946139970&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2015.2435038

DO - 10.1109/TMAG.2015.2435038

M3 - Article

AN - SCOPUS:84946139970

SN - 0018-9464

VL - 51

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11

M1 - 1300604

ER -