TY - JOUR
T1 - Perpendicular Anisotropy Controlled by Seed and Capping Layers of Heusler-Alloy Films
AU - Frost, William James
AU - Samiepour, Marjan
AU - Hirohata, Atsufumi
N1 - This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
PY - 2021/9/6
Y1 - 2021/9/6
N2 - Half-metallic Heusler alloys typically have in-plane magnetic anisotropy, which can be converted to perpendicular by attaching MgO or heavy metal, e.g., Pt, layers as similarly applied for conventional ferromagnets. Recently we have found body-centered cubic (bcc) seed layers, e.g., V and W, to induce perpendicular anisotropy in Heusler-alloy films above, however, they show small giant magnetoresistance (GMR) ratios in spin-valve structures to date. This is partially because of the large resistivity of the seed layer and the nonmagnetic layer in the spin-valve. In this study, we have systematically investigated nonmagnetic overlayers and have found that a Ag layer best maintains the perpendicular anisotropy. The corresponding GMR devices have then been fabricated and characterized, achieving the GMR ratio of 0.03% at room temperature. Such bcc seed layers can offer an alternative method for perpendicularlymagnetizedGMRjunctions for applications.
AB - Half-metallic Heusler alloys typically have in-plane magnetic anisotropy, which can be converted to perpendicular by attaching MgO or heavy metal, e.g., Pt, layers as similarly applied for conventional ferromagnets. Recently we have found body-centered cubic (bcc) seed layers, e.g., V and W, to induce perpendicular anisotropy in Heusler-alloy films above, however, they show small giant magnetoresistance (GMR) ratios in spin-valve structures to date. This is partially because of the large resistivity of the seed layer and the nonmagnetic layer in the spin-valve. In this study, we have systematically investigated nonmagnetic overlayers and have found that a Ag layer best maintains the perpendicular anisotropy. The corresponding GMR devices have then been fabricated and characterized, achieving the GMR ratio of 0.03% at room temperature. Such bcc seed layers can offer an alternative method for perpendicularlymagnetizedGMRjunctions for applications.
U2 - 10.1109/TED.2021.3105490
DO - 10.1109/TED.2021.3105490
M3 - Article
SN - 0018-9383
VL - 69
SP - 1629
EP - 1633
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -