Perpendicular anisotropy in Heusler alloy layers induced by a V seed layer

TY - JOUR

T1 - Perpendicular anisotropy in Heusler alloy layers induced by a V seed layer

AU - Frost, William

AU - Hirohata, Atsufumi

PY - 2016/1/13

Y1 - 2016/1/13

N2 - We have studied the effects of a seed layer of vanadium on the anisotropy of the full-Heusler alloy Co2FeSi for an application as a perpendicularly anisotropic ferromagnetic layer for a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device. Perpendicular magnetic anisotropy (PMA) was estimated from the susceptibility in the linear magnetising region of hysteresis loops for various layer thicknesses of Co2FeSi. Introduction of a second vanadium interface with the Co2FeSi was found to increase observed PMA to a value of K = 3.4x104 erg/cm3. Basic spin-valve (SV) structures were fabricated to investigate the effect of spacer layers on two layers of Co2FeSi.

AB - We have studied the effects of a seed layer of vanadium on the anisotropy of the full-Heusler alloy Co2FeSi for an application as a perpendicularly anisotropic ferromagnetic layer for a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device. Perpendicular magnetic anisotropy (PMA) was estimated from the susceptibility in the linear magnetising region of hysteresis loops for various layer thicknesses of Co2FeSi. Introduction of a second vanadium interface with the Co2FeSi was found to increase observed PMA to a value of K = 3.4x104 erg/cm3. Basic spin-valve (SV) structures were fabricated to investigate the effect of spacer layers on two layers of Co2FeSi.

U2 - 10.1109/TMAG.2016.2517738

DO - 10.1109/TMAG.2016.2517738

M3 - Article

SN - 0018-9464

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

ER -