Perpendicular anisotropy in Heusler alloy layers induced by a V seed layer

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied the effects of a seed layer of vanadium on the anisotropy of the full-Heusler alloy Co2FeSi for an application as a perpendicularly anisotropic ferromagnetic layer for a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device. Perpendicular magnetic anisotropy (PMA) was estimated from the susceptibility in the linear magnetising region of hysteresis loops for various layer thicknesses of Co2FeSi. Introduction of a second vanadium interface with the Co2FeSi was found to increase observed PMA to a value of K = 3.4x104 erg/cm3. Basic spin-valve (SV) structures were fabricated to investigate the effect of spacer layers on two layers of Co2FeSi.
Original languageEnglish
Number of pages4
JournalIEEE Transactions on Magnetics
Early online date13 Jan 2016
DOIs
Publication statusE-pub ahead of print - 13 Jan 2016

Cite this