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Perpendicular anisotropy in Heusler alloy layers induced by a V seed layer

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JournalIEEE Transactions on Magnetics
DateAccepted/In press - 11 Jan 2016
DateE-pub ahead of print (current) - 13 Jan 2016
Number of pages4
Early online date13/01/16
Original languageEnglish

Abstract

We have studied the effects of a seed layer of vanadium on the anisotropy of the full-Heusler alloy Co2FeSi for an application as a perpendicularly anisotropic ferromagnetic layer for a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device. Perpendicular magnetic anisotropy (PMA) was estimated from the susceptibility in the linear magnetising region of hysteresis loops for various layer thicknesses of Co2FeSi. Introduction of a second vanadium interface with the Co2FeSi was found to increase observed PMA to a value of K = 3.4x104 erg/cm3. Basic spin-valve (SV) structures were fabricated to investigate the effect of spacer layers on two layers of Co2FeSi.

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