Phase selection in the rare earth silicides

C. Eames; M. Reakes; S. P. Tear; T. C. Q. Noakes; P. Bailey

doi:10.1103/PhysRevB.82.174112

Phase selection in the rare earth silicides

C. Eames, M. Reakes, S. P. Tear, T. C. Q. Noakes, P. Bailey

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The rare earth silicides form islands with a tetragonal or a hexagonal structure that coexist when grown on the Si (100) surface. We show using medium energy ion scattering that it is possible to selectively grow one of these as a pure phase by controlling the mobility of the rare earth atoms as they are deposited. When dysprosium, holmium, and erbium are deposited onto a liquid nitrogen cooled substrate the hexagonal structural phase is formed after annealing. When erbium and holmium are deposited onto a hot substrate only the tetragonal phase results. For dysprosium silicide growth under conditions of high mobility causes approximately equal numbers of hexagonal and tetragonal islands to form. The system offers a means to obtain fine control over physical properties such as the Schottky barrier height.

Original language	English
Article number	174112
Pages (from-to)	1-9
Number of pages	9
Journal	Physical Review B
Volume	82
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.82.174112
Publication status	Published - 15 Nov 2010

Keywords

ENERGY ION-SCATTERING
SCANNING-TUNNELING-MICROSCOPY
ELECTRON-MICROSCOPY
SCHOTTKY-BARRIER
GROWTH
SURFACES
SI(001)
INTERFACES
NANOWIRES
SILICON

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10.1103/PhysRevB.82.174112

http://prb.aps.org/abstract/PRB/v82/i17/e174112

Cite this

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title = "Phase selection in the rare earth silicides",

abstract = "The rare earth silicides form islands with a tetragonal or a hexagonal structure that coexist when grown on the Si (100) surface. We show using medium energy ion scattering that it is possible to selectively grow one of these as a pure phase by controlling the mobility of the rare earth atoms as they are deposited. When dysprosium, holmium, and erbium are deposited onto a liquid nitrogen cooled substrate the hexagonal structural phase is formed after annealing. When erbium and holmium are deposited onto a hot substrate only the tetragonal phase results. For dysprosium silicide growth under conditions of high mobility causes approximately equal numbers of hexagonal and tetragonal islands to form. The system offers a means to obtain fine control over physical properties such as the Schottky barrier height.",

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author = "C. Eames and M. Reakes and Tear, {S. P.} and Noakes, {T. C. Q.} and P. Bailey",

year = "2010",

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doi = "10.1103/PhysRevB.82.174112",

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AU - Eames, C.

AU - Reakes, M.

AU - Tear, S. P.

AU - Noakes, T. C. Q.

AU - Bailey, P.

PY - 2010/11/15

Y1 - 2010/11/15

N2 - The rare earth silicides form islands with a tetragonal or a hexagonal structure that coexist when grown on the Si (100) surface. We show using medium energy ion scattering that it is possible to selectively grow one of these as a pure phase by controlling the mobility of the rare earth atoms as they are deposited. When dysprosium, holmium, and erbium are deposited onto a liquid nitrogen cooled substrate the hexagonal structural phase is formed after annealing. When erbium and holmium are deposited onto a hot substrate only the tetragonal phase results. For dysprosium silicide growth under conditions of high mobility causes approximately equal numbers of hexagonal and tetragonal islands to form. The system offers a means to obtain fine control over physical properties such as the Schottky barrier height.

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KW - ENERGY ION-SCATTERING

KW - SCANNING-TUNNELING-MICROSCOPY

KW - ELECTRON-MICROSCOPY

KW - SCHOTTKY-BARRIER

KW - GROWTH

KW - SURFACES

KW - SI(001)

KW - INTERFACES

KW - NANOWIRES

KW - SILICON

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EP - 9

JO - Physical Review B

JF - Physical Review B

IS - 17

M1 - 174112

ER -

Phase selection in the rare earth silicides

Abstract

Keywords

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