Research output: Contribution to journal › Article › peer-review
Journal | Physical Review B |
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Date | Published - 15 Nov 2010 |
Issue number | 17 |
Volume | 82 |
Number of pages | 9 |
Pages (from-to) | 1-9 |
Original language | English |
The rare earth silicides form islands with a tetragonal or a hexagonal structure that coexist when grown on the Si (100) surface. We show using medium energy ion scattering that it is possible to selectively grow one of these as a pure phase by controlling the mobility of the rare earth atoms as they are deposited. When dysprosium, holmium, and erbium are deposited onto a liquid nitrogen cooled substrate the hexagonal structural phase is formed after annealing. When erbium and holmium are deposited onto a hot substrate only the tetragonal phase results. For dysprosium silicide growth under conditions of high mobility causes approximately equal numbers of hexagonal and tetragonal islands to form. The system offers a means to obtain fine control over physical properties such as the Schottky barrier height.
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