By the same authors

From the same journal

From the same journal

Phase selection in the rare earth silicides

Research output: Contribution to journalArticlepeer-review

Author(s)

Department/unit(s)

Publication details

JournalPhysical Review B
DatePublished - 15 Nov 2010
Issue number17
Volume82
Number of pages9
Pages (from-to)1-9
Original languageEnglish

Abstract

The rare earth silicides form islands with a tetragonal or a hexagonal structure that coexist when grown on the Si (100) surface. We show using medium energy ion scattering that it is possible to selectively grow one of these as a pure phase by controlling the mobility of the rare earth atoms as they are deposited. When dysprosium, holmium, and erbium are deposited onto a liquid nitrogen cooled substrate the hexagonal structural phase is formed after annealing. When erbium and holmium are deposited onto a hot substrate only the tetragonal phase results. For dysprosium silicide growth under conditions of high mobility causes approximately equal numbers of hexagonal and tetragonal islands to form. The system offers a means to obtain fine control over physical properties such as the Schottky barrier height.

    Research areas

  • ENERGY ION-SCATTERING, SCANNING-TUNNELING-MICROSCOPY, ELECTRON-MICROSCOPY, SCHOTTKY-BARRIER, GROWTH, SURFACES, SI(001), INTERFACES, NANOWIRES, SILICON

Discover related content

Find related publications, people, projects, datasets and more using interactive charts.

View graph of relations