Abstract
We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the aplied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the,escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the Position,of quantum-well energy levels and the value of the escape time are found. the main escape mechanism At room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization.
| Original language | English |
|---|---|
| Pages (from-to) | 1653-1660 |
| Number of pages | 8 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 39 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 2003 |
Bibliographical note
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- optoelectronic devices
- quantum wells (QWs)
- saturable absorbers
- LOCKED SEMICONDUCTOR-LASERS
- DYNAMICS
- ALXGA1-XAS
- EQUATION
- STATES
- GAAS