Photon energy dependence of the sign of the current-induced absorption polarization sensitivity in degenerate semiconductors

B S Ryvkin, E A Avrutin, A C Walker

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We theoretically analyze the effect of current-induced polarization dependence of absorption (fundamental and intersubband) and gain in degenerate semiconductors. The sign of the currentinduced polarization selectivity of absorption is shown to depend on the energy of the initial (or final) state of the transition with respect to the Fermi level and, therefore, on the photon energy. The effect is predicted to be important for understanding and, potentially, engineering polarization properties of devices such as vertical-cavity surface-emitting lasers. (C) 2001 American Institute of Physics.

Original languageEnglish
Pages (from-to)2655-2657
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 30 Apr 2001



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