Photon energy dependence of the sign of the current-induced absorption polarization sensitivity in degenerate semiconductors

B S Ryvkin; E A Avrutin; A C Walker

Photon energy dependence of the sign of the current-induced absorption polarization sensitivity in degenerate semiconductors

B S Ryvkin, E A Avrutin, A C Walker

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We theoretically analyze the effect of current-induced polarization dependence of absorption (fundamental and intersubband) and gain in degenerate semiconductors. The sign of the currentinduced polarization selectivity of absorption is shown to depend on the energy of the initial (or final) state of the transition with respect to the Fermi level and, therefore, on the photon energy. The effect is predicted to be important for understanding and, potentially, engineering polarization properties of devices such as vertical-cavity surface-emitting lasers. (C) 2001 American Institute of Physics.

Original language	English
Pages (from-to)	2655-2657
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	18
Publication status	Published - 30 Apr 2001

Keywords

SURFACE-EMITTING LASERS
VCSELS

Cite this

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title = "Photon energy dependence of the sign of the current-induced absorption polarization sensitivity in degenerate semiconductors",

abstract = "We theoretically analyze the effect of current-induced polarization dependence of absorption (fundamental and intersubband) and gain in degenerate semiconductors. The sign of the currentinduced polarization selectivity of absorption is shown to depend on the energy of the initial (or final) state of the transition with respect to the Fermi level and, therefore, on the photon energy. The effect is predicted to be important for understanding and, potentially, engineering polarization properties of devices such as vertical-cavity surface-emitting lasers. (C) 2001 American Institute of Physics.",

keywords = "SURFACE-EMITTING LASERS, VCSELS",

author = "Ryvkin, {B S} and Avrutin, {E A} and Walker, {A C}",

year = "2001",

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language = "English",

volume = "78",

pages = "2655--2657",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Photon energy dependence of the sign of the current-induced absorption polarization sensitivity in degenerate semiconductors

AU - Ryvkin, B S

AU - Avrutin, E A

AU - Walker, A C

PY - 2001/4/30

Y1 - 2001/4/30

N2 - We theoretically analyze the effect of current-induced polarization dependence of absorption (fundamental and intersubband) and gain in degenerate semiconductors. The sign of the currentinduced polarization selectivity of absorption is shown to depend on the energy of the initial (or final) state of the transition with respect to the Fermi level and, therefore, on the photon energy. The effect is predicted to be important for understanding and, potentially, engineering polarization properties of devices such as vertical-cavity surface-emitting lasers. (C) 2001 American Institute of Physics.

AB - We theoretically analyze the effect of current-induced polarization dependence of absorption (fundamental and intersubband) and gain in degenerate semiconductors. The sign of the currentinduced polarization selectivity of absorption is shown to depend on the energy of the initial (or final) state of the transition with respect to the Fermi level and, therefore, on the photon energy. The effect is predicted to be important for understanding and, potentially, engineering polarization properties of devices such as vertical-cavity surface-emitting lasers. (C) 2001 American Institute of Physics.

KW - SURFACE-EMITTING LASERS

KW - VCSELS

M3 - Article

SN - 0003-6951

VL - 78

SP - 2655

EP - 2657

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -