Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

A. Hirohata; C.C. Yao; D.G. Hasko; W.Y. Lee; Y.B. Xu; J.A.C. Bland

doi:10.1109/20.800608

Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

A. Hirohata, C.C. Yao, D.G. Hasko, W.Y. Lee, Y.B. Xu, J.A.C. Bland

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

Original language	English
Pages (from-to)	3616-3618
Number of pages	2
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 (Part 2)
DOIs	https://doi.org/10.1109/20.800608
Publication status	Published - Sept 1999

Bibliographical note

© 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Keywords

pseudo-Hall effect
magnetoresistance
magnetisation reversal
MOKE

Access to Document

10.1109/20.800608

xuyb9.pdf

http://dx.doi.org/10.1109/20.800608

Cite this

@article{f6fa58812a6943d8ad3cca2ac7ef744a,

title = "Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device",

abstract = "The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.",

keywords = "pseudo-Hall effect, magnetoresistance, magnetisation reversal, MOKE",

author = "A. Hirohata and C.C. Yao and D.G. Hasko and W.Y. Lee and Y.B. Xu and J.A.C. Bland",

note = "{\textcopyright} 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",

year = "1999",

month = sep,

doi = "10.1109/20.800608",

language = "English",

volume = "35",

pages = "3616--3618",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "IEEE",

number = "5 (Part 2)",

}

TY - JOUR

T1 - Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

AU - Hirohata, A.

AU - Yao, C.C.

AU - Hasko, D.G.

AU - Lee, W.Y.

AU - Xu, Y.B.

AU - Bland, J.A.C.

N1 - © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 1999/9

Y1 - 1999/9

N2 - The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

AB - The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

KW - pseudo-Hall effect

KW - magnetoresistance

KW - magnetisation reversal

KW - MOKE

U2 - 10.1109/20.800608

DO - 10.1109/20.800608

M3 - Article

SN - 0018-9464

VL - 35

SP - 3616

EP - 3618

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 (Part 2)

ER -