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Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

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Author(s)

  • A. Hirohata
  • C.C. Yao
  • D.G. Hasko
  • W.Y. Lee
  • Y.B. Xu
  • J.A.C. Bland

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Publication details

JournalIEEE Transactions on Magnetics
DatePublished - Sep 1999
Issue number5 (Part 2)
Volume35
Number of pages2
Pages (from-to)3616-3618
Original languageEnglish

Abstract

The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

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© 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

    Research areas

  • pseudo-Hall effect, magnetoresistance, magnetisation reversal, MOKE

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