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Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

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  • A. Hirohata
  • C.C. Yao
  • D.G. Hasko
  • W.Y. Lee
  • Y.B. Xu
  • J.A.C. Bland


Publication details

JournalIEEE Transactions on Magnetics
DatePublished - Sep 1999
Issue number5 (Part 2)
Number of pages2
Pages (from-to)3616-3618
Original languageEnglish


The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

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    Research areas

  • pseudo-Hall effect, magnetoresistance, magnetisation reversal, MOKE

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