It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.
|Number of pages||4|
|Journal||Semiconductor science and technology|
|Publication status||Published - Apr 2011|
- WAVE-GUIDE LASER