Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

Boris S. Ryvkin; Eugene A. Avrutin; Juha T. Kostamovaara

doi:10.1088/0268-1242/26/4/045010

Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

Boris S. Ryvkin, Eugene A. Avrutin, Juha T. Kostamovaara

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.

Original language	English
Article number	045010
Pages (from-to)	-
Number of pages	4
Journal	Semiconductor science and technology
Volume	26
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/26/4/045010
Publication status	Published - Apr 2011

Keywords

WAVE-GUIDE LASER
DIODE-LASERS
POWER

Access to Document

10.1088/0268-1242/26/4/045010

Cite this

@article{07e25002722d472bbeb52e34a569bc93,

title = "Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching",

abstract = "It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.",

keywords = "WAVE-GUIDE LASER, DIODE-LASERS, POWER",

author = "Ryvkin, {Boris S.} and Avrutin, {Eugene A.} and Kostamovaara, {Juha T.}",

year = "2011",

month = apr,

doi = "10.1088/0268-1242/26/4/045010",

language = "English",

volume = "26",

pages = "--",

journal = "Semiconductor science and technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "4",

}

Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching. / Ryvkin, Boris S.; Avrutin, Eugene A.; Kostamovaara, Juha T.

In: Semiconductor science and technology, Vol. 26, No. 4, 045010, 04.2011, p. -.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

AU - Ryvkin, Boris S.

AU - Avrutin, Eugene A.

AU - Kostamovaara, Juha T.

PY - 2011/4

Y1 - 2011/4

N2 - It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.

AB - It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.

KW - WAVE-GUIDE LASER

KW - DIODE-LASERS

KW - POWER

UR - http://www.scopus.com/inward/record.url?scp=79952304788&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/26/4/045010

DO - 10.1088/0268-1242/26/4/045010

M3 - Article

VL - 26

SP - -

JO - Semiconductor science and technology

JF - Semiconductor science and technology

SN - 0268-1242

IS - 4

M1 - 045010

ER -

Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

Abstract

Keywords

Access to Document

Other files and links

Cite this