Abstract
It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.
Original language | English |
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Article number | 045010 |
Pages (from-to) | - |
Number of pages | 4 |
Journal | Semiconductor science and technology |
Volume | 26 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2011 |
Keywords
- WAVE-GUIDE LASER
- DIODE-LASERS
- POWER