Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

Boris S. Ryvkin, Eugene A. Avrutin, Juha T. Kostamovaara

Research output: Contribution to journalArticlepeer-review


It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very large ratio of active layer thickness to optical confinement factor (similar to 8 mu m) can result in single, high-energy (>> 1 nJ) short (similar to 100 ps) single optical pulses at wavelengths similar to 1 mu m. Calculations predict that high electrical-to-optical conversion efficiency can be achieved in such structures, which require an injection current pulse of a modest amplitude of similar to 10 A and a duration of 1.5-2 ns. A narrow asymmetric waveguide design is proposed as a way of implementing such a structure while maintaining good far-field properties of the single emitted mode.

Original languageEnglish
Article number045010
Pages (from-to)-
Number of pages4
JournalSemiconductor science and technology
Issue number4
Publication statusPublished - Apr 2011



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