Recent developments on MnN for spintronic applications

Gonzalo Vallejo Fernandez; Markus Meinert

doi:10.3390/magnetochemistry7080116

Recent developments on MnN for spintronic applications

Gonzalo Vallejo Fernandez, Markus Meinert

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements for such materials are: relatively high magnetocrystalline anisotropy constant, low cost, high corrosion resistance and the ability to induce a large ex-change bias, i.e. loop shift, when grown adjacent to a ferromagnetic layer. In this article, a review on recent developments on the novel antiferromagnetic material MnN is presented. This material shows potential as a replacement for the commonly used antiferromagnet of choice, i.e. IrMn. Although the results so far look promising, further work is required for the optimisation of this material.

Original language	English
Article number	116
Number of pages	10
Journal	Magnetochemistry
Volume	7
Issue number	8
DOIs	https://doi.org/10.3390/magnetochemistry7080116
Publication status	Published - 11 Aug 2021

Bibliographical note

Keywords

antiferromagnetic spintronics
exchange bias
MnN
spintronics
magnetism and magnetic materials

Access to Document

10.3390/magnetochemistry7080116Licence: CC BY

Recent Developments on MnN for Spintronic Applications
© 2021 by the authors
Final published version, 2.08 MBLicence: CC BY

Cite this

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