Recent developments on MnN for spintronic applications

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There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements for such materials are: relatively high magnetocrystalline anisotropy constant, low cost, high corrosion resistance and the ability to induce a large ex-change bias, i.e. loop shift, when grown adjacent to a ferromagnetic layer. In this article, a review on recent developments on the novel antiferromagnetic material MnN is presented. This material shows potential as a replacement for the commonly used antiferromagnet of choice, i.e. IrMn. Although the results so far look promising, further work is required for the optimisation of this material.
Original languageEnglish
Article number116
Number of pages10
Issue number8
Publication statusPublished - 11 Aug 2021

Bibliographical note

© 2021 by the authors


  • antiferromagnetic spintronics
  • exchange bias
  • MnN
  • spintronics
  • magnetism and magnetic materials

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