Abstract
There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements for such materials are: relatively high magnetocrystalline anisotropy constant, low cost, high corrosion resistance and the ability to induce a large ex-change bias, i.e. loop shift, when grown adjacent to a ferromagnetic layer. In this article, a review on recent developments on the novel antiferromagnetic material MnN is presented. This material shows potential as a replacement for the commonly used antiferromagnet of choice, i.e. IrMn. Although the results so far look promising, further work is required for the optimisation of this material.
Original language | English |
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Article number | 116 |
Number of pages | 10 |
Journal | Magnetochemistry |
Volume | 7 |
Issue number | 8 |
DOIs | |
Publication status | Published - 11 Aug 2021 |
Bibliographical note
© 2021 by the authorsKeywords
- antiferromagnetic spintronics
- exchange bias
- MnN
- spintronics
- magnetism and magnetic materials