Resolution of Non-Destructive Imaging by Controlled Acceleration Voltage in Scanning Electron Microscopy

Kelvin Elphick; Bernardus Aditya; Jiaqi Wu; Michihiro Ohta; Atsufumi Hirohata

doi:10.1016/j.ultramic.2021.113316

Resolution of Non-Destructive Imaging by Controlled Acceleration Voltage in Scanning Electron Microscopy

Kelvin Elphick, Bernardus Aditya, Jiaqi Wu, Michihiro Ohta, Atsufumi Hirohata

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A new method of non-destructive sub-surface interfacial characterisation has been developed recently, which can be useful for quality assurance of a buried interface in nanoelectronic devices, such as magnetic random access memory. Since the cell size of these devices have been reducing their sizes, it is important to evaluate the resolution of the non-destructive imaging. A sub nanometric layer of different materials such as W and Pt was grown underneath a capping layer with controlled thickness for the evaluation of their sizes in this study. This provides systematic experimental data to show that the technique is capable to resolve down to approximately 2 nm in the plane, which is sufficient for the device imaging.

Original language	English
Article number	113316
Number of pages	5
Journal	Ultramicroscopy
Volume	228
Early online date	16 May 2021
DOIs	https://doi.org/10.1016/j.ultramic.2021.113316
Publication status	Published - 1 Sept 2021

Bibliographical note

Access to Document

10.1016/j.ultramic.2021.113316

SEM resolution_210421
© 2021 Elsevier B.V. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.
Accepted author manuscript, 3.83 MBLicence: CC BY-NC-ND

Cite this

@article{bb50e251b73c4709b5920b270d6a251b,

title = "Resolution of Non-Destructive Imaging by Controlled Acceleration Voltage in Scanning Electron Microscopy",

abstract = "A new method of non-destructive sub-surface interfacial characterisation has been developed recently, which can be useful for quality assurance of a buried interface in nanoelectronic devices, such as magnetic random access memory. Since the cell size of these devices have been reducing their sizes, it is important to evaluate the resolution of the non-destructive imaging. A sub nanometric layer of different materials such as W and Pt was grown underneath a capping layer with controlled thickness for the evaluation of their sizes in this study. This provides systematic experimental data to show that the technique is capable to resolve down to approximately 2 nm in the plane, which is sufficient for the device imaging.",

author = "Kelvin Elphick and Bernardus Aditya and Jiaqi Wu and Michihiro Ohta and Atsufumi Hirohata",

note = "{\textcopyright} 2021 Elsevier B.V. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy.",

year = "2021",

month = sep,

day = "1",

doi = "10.1016/j.ultramic.2021.113316",

language = "English",

volume = "228",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

}

TY - JOUR

T1 - Resolution of Non-Destructive Imaging by Controlled Acceleration Voltage in Scanning Electron Microscopy

AU - Elphick, Kelvin

AU - Aditya, Bernardus

AU - Wu, Jiaqi

AU - Ohta, Michihiro

AU - Hirohata, Atsufumi

PY - 2021/9/1

Y1 - 2021/9/1

N2 - A new method of non-destructive sub-surface interfacial characterisation has been developed recently, which can be useful for quality assurance of a buried interface in nanoelectronic devices, such as magnetic random access memory. Since the cell size of these devices have been reducing their sizes, it is important to evaluate the resolution of the non-destructive imaging. A sub nanometric layer of different materials such as W and Pt was grown underneath a capping layer with controlled thickness for the evaluation of their sizes in this study. This provides systematic experimental data to show that the technique is capable to resolve down to approximately 2 nm in the plane, which is sufficient for the device imaging.

AB - A new method of non-destructive sub-surface interfacial characterisation has been developed recently, which can be useful for quality assurance of a buried interface in nanoelectronic devices, such as magnetic random access memory. Since the cell size of these devices have been reducing their sizes, it is important to evaluate the resolution of the non-destructive imaging. A sub nanometric layer of different materials such as W and Pt was grown underneath a capping layer with controlled thickness for the evaluation of their sizes in this study. This provides systematic experimental data to show that the technique is capable to resolve down to approximately 2 nm in the plane, which is sufficient for the device imaging.

U2 - 10.1016/j.ultramic.2021.113316

DO - 10.1016/j.ultramic.2021.113316

M3 - Article

SN - 0304-3991

VL - 228

JO - Ultramicroscopy

JF - Ultramicroscopy

M1 - 113316

ER -