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Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Research output: Contribution to journalArticle

Author(s)

  • Abdul Shakoor
  • Roberto Lo Savio
  • Paolo Cardile
  • Simone L. Portalupi
  • Dario Gerace
  • Karl Welna
  • Simona Boninelli
  • Giorgia Franzo
  • Francesco Priolo
  • Thomas F. Krauss
  • Matteo Galli
  • Liam O'Faolain

Department/unit(s)

Publication details

JournalLaser & Photonics Reviews
DateE-pub ahead of print - 10 Sep 2012
DatePublished (current) - Jan 2013
Issue number1
Volume7
Number of pages8
Pages (from-to)114-121
Early online date10/09/12
Original languageEnglish

Abstract

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Delta lambda = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm(2) is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.

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