Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Makoto Tsukahara; Michihiro Yamada; Takahiro Naito; Shinya Yamada; Kentarou Sawano; Vlado K. Lazarov; Kohei Hamaya

doi:10.7567/1882-0786/ab0252

Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Makoto Tsukahara, Michihiro Yamada, Takahiro Naito, Shinya Yamada, Kentarou Sawano, Vlado K. Lazarov, Kohei Hamaya

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm ² , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts.

Original language	English
Article number	033002
Number of pages	4
Journal	Applied Physics Express
Volume	12
Issue number	3
Early online date	15 Feb 2019
DOIs	https://doi.org/10.7567/1882-0786/ab0252
Publication status	Published - 1 Mar 2019

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10.7567/1882-0786/ab0252

Tsukahara_2019_Appl._Phys._Express_12_033002
©2019 The Japan Society of Applied Physics
Final published version, 776 KBLicence: CC BY

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@article{9ae5e81c2f3e418592c3de2b4c6ae8df,

title = "Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts",

abstract = " Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm 2 , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts. ",

author = "Makoto Tsukahara and Michihiro Yamada and Takahiro Naito and Shinya Yamada and Kentarou Sawano and Lazarov, {Vlado K.} and Kohei Hamaya",

note = "{\textcopyright}2019 The Japan Society of Applied Physics",

year = "2019",

month = mar,

day = "1",

doi = "10.7567/1882-0786/ab0252",

language = "English",

volume = "12",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

AU - Tsukahara, Makoto

AU - Yamada, Michihiro

AU - Naito, Takahiro

AU - Yamada, Shinya

AU - Sawano, Kentarou

AU - Lazarov, Vlado K.

AU - Hamaya, Kohei

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm 2 , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts.

AB - Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm 2 , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts.

UR - http://www.scopus.com/inward/record.url?scp=85063347508&partnerID=8YFLogxK

U2 - 10.7567/1882-0786/ab0252

DO - 10.7567/1882-0786/ab0252

M3 - Article

AN - SCOPUS:85063347508

SN - 1882-0778

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

IS - 3

M1 - 033002

ER -

Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

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