Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission

Evgeny Avrutin; B.S. Ryvkin

doi:10.1088/1361-6641/ac985a

Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission

Evgeny Avrutin, B.S. Ryvkin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier density associated with the broad AL, as well as the proximity of the AL to the p-cladding, ensure that the electron leakage current, the major detrimental factor in red lasers, stays modest in a broad range of excitation levels. This in turn promises high-power, efficient operation.

Original language	English
Article number	125002
Number of pages	6
Journal	Semiconductor science and technology
Volume	37
DOIs	https://doi.org/10.1088/1361-6641/ac985a
Publication status	Published - 20 Oct 2022

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10.1088/1361-6641/ac985aLicence: CC BY

Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission
© 2022 The Author(s).
Final published version, 2.8 MBLicence: CC BY

Cite this

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abstract = "A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier density associated with the broad AL, as well as the proximity of the AL to the p-cladding, ensure that the electron leakage current, the major detrimental factor in red lasers, stays modest in a broad range of excitation levels. This in turn promises high-power, efficient operation.",

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AB - A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier density associated with the broad AL, as well as the proximity of the AL to the p-cladding, ensure that the electron leakage current, the major detrimental factor in red lasers, stays modest in a broad range of excitation levels. This in turn promises high-power, efficient operation.

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