Shape Defect Effect in Perpendicular Shape Anisotropy Nanodots

Longlong Zhang; Xianyang Lu; Junlin Wang; Lijun Ni; Yu Yan; Hao Meng; Bo Liu; Jing Wu; Yongbing Xu

doi:10.1109/LMAG.2021.3088399

Shape Defect Effect in Perpendicular Shape Anisotropy Nanodots

Longlong Zhang, Xianyang Lu, Junlin Wang, Lijun Ni, Yu Yan, Hao Meng, Bo Liu, Jing Wu, Yongbing Xu

Research output: Contribution to journal › Article › peer-review

Abstract

Perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA-STT-MRAM) demonstrates high thermal stability when size is reduced to 20 nm, which gives a new way to improve the integrity of electronic devices. This long and narrow device also poses challenges in the device fabrication process, such as sample tilt and etching defects. We used a micromagnetic simulation method to investigate the relationship between those defects and device performance. The coercivity and critical switching current density of PSA-MRAM have been calculated and analyzed with micromagnetic simulation, a three-dimensional Stoner–Wohlfarth model, and spin-filter theory. Our results demonstrate how shape defects affect the performance of the PSA-MRAM and provide guidelines for practical realization of nanoscale PSA-MRAM.

Original language	English
Article number	4501905
Number of pages	5
Journal	IEEE Magnetics Letters
Volume	12
DOIs	https://doi.org/10.1109/LMAG.2021.3088399
Publication status	Published - 10 Jun 2021

Keywords

MRAM
micromagnetic simulation
SPINTRONICS

Access to Document

10.1109/LMAG.2021.3088399

Shape defect effect in perpendicular shape anisotropy nano-dotsAccepted author manuscript, 8.31 MB

Cite this

@article{84529d2c62dd463bb475fe7af31729d3,

title = "Shape Defect Effect in Perpendicular Shape Anisotropy Nanodots",

abstract = "Perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA-STT-MRAM) demonstrates high thermal stability when size is reduced to 20 nm, which gives a new way to improve the integrity of electronic devices. This long and narrow device also poses challenges in the device fabrication process, such as sample tilt and etching defects. We used a micromagnetic simulation method to investigate the relationship between those defects and device performance. The coercivity and critical switching current density of PSA-MRAM have been calculated and analyzed with micromagnetic simulation, a three-dimensional Stoner–Wohlfarth model, and spin-filter theory. Our results demonstrate how shape defects affect the performance of the PSA-MRAM and provide guidelines for practical realization of nanoscale PSA-MRAM.",

keywords = "MRAM, micromagnetic simulation, SPINTRONICS",

author = "Longlong Zhang and Xianyang Lu and Junlin Wang and Lijun Ni and Yu Yan and Hao Meng and Bo Liu and Jing Wu and Yongbing Xu",

year = "2021",

month = jun,

day = "10",

doi = "10.1109/LMAG.2021.3088399",

language = "English",

volume = "12",

journal = "IEEE Magnetics Letters",

issn = "1949-307X",

publisher = "IEEE",

}

TY - JOUR

T1 - Shape Defect Effect in Perpendicular Shape Anisotropy Nanodots

AU - Zhang, Longlong

AU - Lu, Xianyang

AU - Wang, Junlin

AU - Ni, Lijun

AU - Yan, Yu

AU - Meng, Hao

AU - Liu, Bo

AU - Wu, Jing

AU - Xu, Yongbing

PY - 2021/6/10

Y1 - 2021/6/10

N2 - Perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA-STT-MRAM) demonstrates high thermal stability when size is reduced to 20 nm, which gives a new way to improve the integrity of electronic devices. This long and narrow device also poses challenges in the device fabrication process, such as sample tilt and etching defects. We used a micromagnetic simulation method to investigate the relationship between those defects and device performance. The coercivity and critical switching current density of PSA-MRAM have been calculated and analyzed with micromagnetic simulation, a three-dimensional Stoner–Wohlfarth model, and spin-filter theory. Our results demonstrate how shape defects affect the performance of the PSA-MRAM and provide guidelines for practical realization of nanoscale PSA-MRAM.

AB - Perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA-STT-MRAM) demonstrates high thermal stability when size is reduced to 20 nm, which gives a new way to improve the integrity of electronic devices. This long and narrow device also poses challenges in the device fabrication process, such as sample tilt and etching defects. We used a micromagnetic simulation method to investigate the relationship between those defects and device performance. The coercivity and critical switching current density of PSA-MRAM have been calculated and analyzed with micromagnetic simulation, a three-dimensional Stoner–Wohlfarth model, and spin-filter theory. Our results demonstrate how shape defects affect the performance of the PSA-MRAM and provide guidelines for practical realization of nanoscale PSA-MRAM.

KW - MRAM

KW - micromagnetic simulation

KW - SPINTRONICS

U2 - 10.1109/LMAG.2021.3088399

DO - 10.1109/LMAG.2021.3088399

M3 - Article

SN - 1949-307X

VL - 12

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

M1 - 4501905

ER -