Silane adsorption on Pd(100) - a low-temperature RAIRS study

C J Ennis; S A Morton; L Sun; S P Tear; E M McCash

Silane adsorption on Pd(100) - a low-temperature RAIRS study

C J Ennis, S A Morton, L Sun, S P Tear, E M McCash

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Silane adsorption and reaction on Pd(100) have been investigated between 23-80 K by reflection-absorption infrared spectroscopy (RAIRS). Exposure to a silane/argon mixture at a substrate temperature of 23 K results in physisorbed islands of silane with argon matrix isolated silane in subsequent layers. At a substrate temperature of 70 K the silane forms a uniform physisorbed layer on the surface which undergoes dissociative chemisorption at similar to 78 K. On Pd(100) a surface stabilised SIH moiety is formed; direct adsorption at 80 K leads to the formation of islands of SiH with overlayers of physisorbed molecular silane. The SiH species is stable to 200 K at which point complete dissociation occurs. (C) 1999 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	217-224
Number of pages	8
Journal	Chemical Physics Letters
Volume	304
Issue number	3-4
Publication status	Published - 30 Apr 1999

Keywords

SURFACE

Cite this

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title = "Silane adsorption on Pd(100) - a low-temperature RAIRS study",

abstract = "Silane adsorption and reaction on Pd(100) have been investigated between 23-80 K by reflection-absorption infrared spectroscopy (RAIRS). Exposure to a silane/argon mixture at a substrate temperature of 23 K results in physisorbed islands of silane with argon matrix isolated silane in subsequent layers. At a substrate temperature of 70 K the silane forms a uniform physisorbed layer on the surface which undergoes dissociative chemisorption at similar to 78 K. On Pd(100) a surface stabilised SIH moiety is formed; direct adsorption at 80 K leads to the formation of islands of SiH with overlayers of physisorbed molecular silane. The SiH species is stable to 200 K at which point complete dissociation occurs. (C) 1999 Elsevier Science B.V. All rights reserved.",

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T1 - Silane adsorption on Pd(100) - a low-temperature RAIRS study

AU - Ennis, C J

AU - Morton, S A

AU - Sun, L

AU - Tear, S P

AU - McCash, E M

PY - 1999/4/30

Y1 - 1999/4/30

N2 - Silane adsorption and reaction on Pd(100) have been investigated between 23-80 K by reflection-absorption infrared spectroscopy (RAIRS). Exposure to a silane/argon mixture at a substrate temperature of 23 K results in physisorbed islands of silane with argon matrix isolated silane in subsequent layers. At a substrate temperature of 70 K the silane forms a uniform physisorbed layer on the surface which undergoes dissociative chemisorption at similar to 78 K. On Pd(100) a surface stabilised SIH moiety is formed; direct adsorption at 80 K leads to the formation of islands of SiH with overlayers of physisorbed molecular silane. The SiH species is stable to 200 K at which point complete dissociation occurs. (C) 1999 Elsevier Science B.V. All rights reserved.

AB - Silane adsorption and reaction on Pd(100) have been investigated between 23-80 K by reflection-absorption infrared spectroscopy (RAIRS). Exposure to a silane/argon mixture at a substrate temperature of 23 K results in physisorbed islands of silane with argon matrix isolated silane in subsequent layers. At a substrate temperature of 70 K the silane forms a uniform physisorbed layer on the surface which undergoes dissociative chemisorption at similar to 78 K. On Pd(100) a surface stabilised SIH moiety is formed; direct adsorption at 80 K leads to the formation of islands of SiH with overlayers of physisorbed molecular silane. The SiH species is stable to 200 K at which point complete dissociation occurs. (C) 1999 Elsevier Science B.V. All rights reserved.

KW - SURFACE

M3 - Article

SN - 0009-2614

VL - 304

SP - 217

EP - 224

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 3-4

ER -